參數(shù)資料
型號(hào)： LT1162IN
廠商： LINEAR TECHNOLOGY CORP
元件分類： 功率晶體管
英文描述： Half-/Full-Bridge N-Channel Power MOSFET Drivers
中文描述： 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24
封裝： 0.300 INCH, PLASTIC, DIP-24
文件頁(yè)數(shù)： 3/16頁(yè)
文件大?。?/td> 347K
代理商： LT1162IN
3
LT1160/LT1162
I
UVOUT
V
UVOUT
V
OH
Undervoltage Output Leakage
Undervoltage Output Saturation
Top Gate ON Voltage
Bottom Gate ON Voltage
Top Gate OFF Voltage
Bottom Gate OFF Voltage
Top Gate Rise Time
V
+
= 15V
V
+
= 7.5V, I
UVOUT
= 2.5mA
V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 4)
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 4)
V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 4)
V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 4)
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 4)
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 4)
V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
(Note 4)
V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 4)
V
INBOTTOM
(+) Transition, V
INTOP
= 2V,
Measured at V
TGATE DR
(Note 4)
V
INTOP
(+) Transition, V
INBOTTOM
= 2V,
Measured at V
BGATE DR
(Note 4)
V
INBOTTOM
(–) Transition, V
INTOP
= 2V,
Measured at V
TGATE DR
(Note 4)
V
INTOP
(–) Transition, V
INBOTTOM
= 2V,
Measured at V
BGATE DR
(Note 4)
G
0.1
0.2
11.3
11.3
0.4
0.4
130
5
μ
A
V
V
V
V
V
ns
G
0.4
12
12
0.7
0.7
200
G
11
11
G
V
OL
G
G
t
r
G
Bottom Gate Rise Time
G
90
200
ns
t
f
Top Gate Fall Time
G
60
140
ns
Bottom Gate Fall Time
G
60
140
ns
t
D1
Top Gate Turn-On Delay
G
250
500
ns
Bottom Gate Turn-On Delay
G
200
400
ns
t
D2
Top Gate Turn-Off Delay
G
300
600
ns
Bottom Gate Turn-Off Delay
G
200
400
ns
t
D3
Top Gate Lockout Delay
G
300
600
ns
Bottom Gate Lockout Delay
G
250
500
ns
t
D4
Top Gate Release Delay
G
250
500
ns
Bottom Gate Release Delay
G
200
400
ns
Test Circuit, T
A
= 25
°
C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
= 3000pF.
Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
ELECTRICAL CHARACTERISTICS
The
G
denotes specifications which apply over the full operating
temperature range.
Note 1:
For the LT1160, Pins 1, 10 should be connected together. For the
LT1162, Pins 1, 7, 14, 20 should be connected together.
Note 2:
T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1160CN/LT1160IN: T
J
= T
A
+ (P
D
)(70
°
C/W)
LT1160CS/LT1160IS: T
J
= T
A
+ (P
D
)(110
°
C/W)
LT1162CN/LT1162IN: T
J
= T
A
+ (P
D
)(58
°
C/W)
LT1162CS/LT1162IS: T
J
= T
A
+ (P
D
)(80
°
C/W)
Note 3:
I
S
is the sum of currents through SV
+
, PV
+
and Boost pins.
I
BOOST
is the current through the Boost pin. Dynamic supply current is
higher due to the gate charge being delivered at the switching frequency.
See Typical Performance Characteristics and Applications Information
sections. The LT1160 = 1/2 LT1162.
Note 4:
See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
相關(guān)PDF資料
PDF描述
LT1162ISW Dual 1-of-4 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70
LT1160CS TRANS PNP LF 400VCEO .1A TO-126
LT1160IN Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1160IS Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1161CSW Quad Protected High-Side MOSFET Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LT1162IN#PBF 功能描述:IC PWR MOSFET DRIVER NCH 24-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
LT1162ISW 功能描述:IC PWR MOSFET DRIVER N-CH 24SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1162ISW#PBF 功能描述:IC PWR MOSFET DRIVER NCH 24SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1162ISW#TR 功能描述:IC DRIVER MOSF N-CH DUAL 24SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1162ISW#TRPBF 功能描述:IC PWR MOSFET DRIVER NCH 24SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*