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參數(shù)資料
| 型號： | LT1160IN |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| 中文描述： | 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-14 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 347K |
| 代理商： | LT1160IN |
11
LT1160/LT1162
APPLICATIO
S I
FOR
ATIO
U
W
U
U
+
+
IN TOP
IN BOTTOM
BOOST
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
LT1160
HV
V
OUT
R
GS
R
SENSE
1160 F02
12V
REF PWM
OUT A
OUT A
SV
+
PV
+
Figure 2. Adding Synchronous Switching to a Step-Down Switching Regulator
Motor Drive Applications
In applications where rotation is always in the same
direction, a single LT1160 controlling a half-bridge can be
used to drive a DC motor. One end of the motor may be
connected either to supply or to ground as seen on Figure
3. A motor in this configuration is controlled by its inputs
which give three alternatives: run, free running stop (coast-
ing) and fast stop (“plugging” braking, with the motor
shorted by one of the MOSFETs).
To drive a DC motor in both directions the LT1162 can be
used to drive an H-bridge output stage. In this configura-
tion the motor can be made to run clockwise, counter-
clockwise, stop rapidly (“plugging” braking) or free run
(coast) to a stop. A very rapid stop may be achieved by
reversing the current, though this requires more careful
design to stop the motor dead. In practice a closed-loop
control system with tachometric feedback is usually
necessary.
The motor speed in these examples can be controlled by
switching the drivers with pulse width modulated square
waves. This approach is particularly suitable for micro-
computers/DSP control loops.
Figure 3. Driving a Supply Referenced Motor
SV
+
PV
+
BOOST
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
PGND
LT1160
12V
1160 F03
HV
+
IN TOP
IN BOTTOM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1160IS | Half-/Full-Bridge N-Channel Power MOSFET Drivers |
| LT1161CSW | Quad Protected High-Side MOSFET Driver |
| LT1161ISW | Quad Protected High-Side MOSFET Driver |
| LT1167AC | TRANS NPN 50VCEO 1A TO-92L |
| LT1167IN8 | Precision Instrumentation Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1160IN#PBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160IS | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160IS#PBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160IS#TR | 功能描述:IC DRIVER PWR MOSFET N-CH 14SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1160IS#TRPBF | 功能描述:IC PWR MOSFET DRIVER N-CH 14SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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