參數(shù)資料
型號(hào)： LT1158CS
廠商： LINEAR TECHNOLOGY CORP
元件分類(lèi)： MOSFETs
英文描述： Half Bridge N-Channel Power MOSFET Driver
中文描述： 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16
封裝： PLASTIC, SOL-16
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 426K
代理商： LT1158CS
LT1158
3
TEMPERATURE (°C)
–50
8
10
14
25
75
LT
1158 G02
6
4
–25
0
50
100
125
2
0
12
S
I
2
+ I
+ I
16
V
+
= 12V
INPUT HIGH
INPUT LOW
ENABLE LOW
SUPPLY VOLTAGE (V)
0
8
10
12
30
LT1158 G01
6
4
10
20
40
2
0
14
I
2
+ I
10
+ I
16
ENABLE LOW
S
5
15
25
35
INPUT LOW
INPUT HIGH
V13 = 0V
V13 = V
+
INPUT FREQUENCY (kHz)
1
0
S
5
10
15
20
30
10
100
LT1158 G03
25
50% DUTY CYCLE
C
GATE
= 3000pF
V
+
= 24V
V
+
= 6V
V
+
= 12V
DC Supply Current
DC Supply Current
Dynamic Supply Current (V
+
)
TYPICAL PERFOR
M
A
CE CHARACTERISTICS
U
Test Circuit, T
A
= 25
°
C, V
+
= V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4
ELECTRICAL CHARACTERISTICS
open, Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
The
G
denotes specifications that apply over the full operating temperature
range.
Note 1:
T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1158IN, LT1158CN: T
J
= T
A
+ (P
D
×
70
°
C/W)
LT1158IS, LT1158CS: T
J
= T
A
+ (P
D
×
110
°
C/W)
Note 2:
Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See typical performance
characteristics and applications information.
Note 3:
Gate rise times are measured from 2V to 10V, delay times are
measured from the input transition to when the gate voltage has decreased
to 10V, and fall times are measured from 10V to 2V.
LT1158I
TYP
1.75
1.5
0.1
0.5
110
150
LT1158C
TYP
1.75
1.5
0.1
0.5
110
150
SYMBOL
V14 – V13 Top Turn-Off Threshold
V8
Bottom Turn-Off Threshold
I
5
Fault Output Leakage
V5
Fault Output Saturation
V12 – V11 Fault Conduction Threshold
V12 – V11 Current Limit Threshold
PARAMETER
CONDITIONS
V
+
= V16 = 5V, V6 = 0.8V
V
+
= V16 = 5V, V6 = 2V
V
+
= 30V, V16 = 15V, V6 = 2V
V
+
= 30V, V16 = 15V, V6 = 2V, I5 = 10mA
V
+
= 30V, V16 = 15V, V6 = 2V, I5 = 100
μ
A
V
+
= 30V, V16 = 15V, V6 = 2V, Closed Loop
MIN
1
1
MAX
2.5
2
1
1
130
170
180
1.4
MIN
1
1
MAX
2.5
2
1
1
135
180
180
1.4
UNITS
V
V
G
μ
A
V
mV
mV
mV
90
130
120
1.1
85
120
120
1.1
G
V12 – V11 Current Limit Inhibit
V
DS
Threshold
t
R
Top Gate Rise Time
t
D
Top Gate Turn-Off Delay
t
F
Top Gate Fall Time
t
R
Bottom Gate Rise Time
t
D
Bottom Gate Turn-Off Delay
t
F
Bottom Gate Fall Time
V
+
= V12 = 12V, V6 = 2V, Decrease V11
until V15 goes low
Pin 6 (+) Transition, Meas. V15 – V13 (Note 3)
Pin 6 (–) Transition, Meas. V15 – V13 (Note 3)
Pin 6 (–) Transition, Meas. V15 – V13 (Note 3)
Pin 6 (–) Transition, Meas. V9 (Note 3)
Pin 6 (+) Transition, Meas. V9 (Note 3)
Pin 6 (+) Transition, Meas. V9 (Note 3)
1.25
1.25
V
G
130
350
120
130
200
100
250
550
250
250
400
200
130
350
120
130
200
100
250
550
250
250
400
200
ns
ns
ns
ns
ns
ns
G
G
G
G
G
相關(guān)PDF資料
PDF描述
LT1158I Half Bridge N-Channel Power MOSFET Driver
LT1158IS Half Bridge N-Channel Power MOSFET Driver
LT1160CN Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers
LT1162CN Half-/Full-Bridge N-Channel Power MOSFET Drivers
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