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參數(shù)資料
| 型號(hào)： | LSIT120-2 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | MONOLITHIC DUAL NPN TRANSISTORS |
| 中文描述： | 整體式雙NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 28K |
| 代理商： | LSIT120-2 |
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
|V
BE1
-V
BE2
|
|(V
BE1
-V
BE2
)|/
T Base Emitter Voltage Differential
Change with Temperature
Base Emitter Voltage Differential
1
2
3
5
MAX. mV
I
C
= 10
μ
A
I
C
= 10
μ
A
T = -55
°
C to +125
°
C
I
C
= 10
μ
A
V
CE
= 5V
V
CE
= 5V
3
5
10
20
MAX.
μ
V/
°
C
|I
B1
- I
B2
|
Base Current Differential
2.5
5
25
25
MAX. nA
V
CE
= 5V
MATCHING CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
IT120A IT120 IT121 IT122 UNITS CONDITIONS
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
μ
A.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45°
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
DIM. A
0.165
0.185
0.040
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45°
1
2
34
5
6
7
8
0.029
0.045
SEATING
PLANE
C1 1
B1
E1
N/C
2
3
4
5
6
7
8
N/C
C2
B2
E2
P-DIP
C1 1
B1
E1
N/C
2
3
4
5
6
7
8
N/C
C2
B2
E2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
(10.29)
MAX.
(4.78)
(5.00)
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