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| 型號： | LSIT120-2 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | MONOLITHIC DUAL NPN TRANSISTORS |
| 中文描述： | 整體式雙NPN晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 28K |
| 代理商： | LSIT120-2 |
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
C1
3
5
BOTTOM VIEW
2
6
B1 E1 E2 B2
C1
C2
26 X 29 MILS
E1
E2
C2
B1
B2
IT120A IT120 IT121 IT122
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT120 Series
Pin for Pin Compatible
ABSOLUTE MAXIMUM RATINGS NOTE 1
(T
A
= 25
°
C unless otherwise noted)
I
C
Collector Current
10mA
Maximum Temperatures
Storage Temperature Range
Operating Temperature Range
-65
°
C to +200
°
C
-55
°
C to +150
°
C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
Linear Derating Factor
250mW
2.3mW/
°
C
500mW
4.3mW/
°
C
SYMBOL CHARACTERISTICS IT120A IT120 IT121 IT122 UNITS CONDITIONS
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
225
V
CE
(SAT) Collector Saturation Voltage
I
EBO
I
CBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Narrow Band Noise Figure
3
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
45
45
6.2
60
200
45
45
6.2
60
200
225
0.5
1
1
2
2
10
220
3
45
45
6.2
60
80
100
0.5
1
1
2
2
10
180
3
45
45
6.2
60
80
100
0.5
1
1
2
2
10
180
3
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
V
V
V
I
C
= 10
μ
A
I
C
= 10
μ
A
I
E
= 10
μ
A
I
C
= 10
μ
A
I
C
= 10
μ
A
I
C
= 1.0mA V
CE
= 5V
I
C
= 0.5mA I
B
= 0.05mA
I
C
= 0
I
E
= 0
I
E
= 0
V
CC
= 0
V
CC
=
±
60V
I
C
= 1mA
I
C
= 100
μ
A
BW = 200Hz, R
G
= 10 K
f=1KHz
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
V
CE
= 5V
NOTE 2
0.5
1
1
2
2
10
220
V
nA
nA
pF
pF
nA
MHz
dB
Emitter Cutoff Current
Collector Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
V
EB
= 3V
V
CB
= 45V
V
CB
= 5V
V
CE
= 5V
V
CE
= 5V
ELECTRICAL CHARACTERISTICS T
A
=25
°
C (unless otherwise noted)
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