- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377663 > LS4343 (Powerex Power Semiconductors) POW-R-BLOK Single SCR Isolated Module (430 Amperes / 1800-2200 Volts) PDF資料下載
參數(shù)資料
| 型號(hào)： | LS4343 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | POW-R-BLOK Single SCR Isolated Module (430 Amperes / 1800-2200 Volts) |
| 中文描述： | 的POW - r -隔離臺(tái)BLOk反應(yīng)腔單可控硅模塊（四百三十安培/ 1800-2200伏特） |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | LS4343 |
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
TM
Single SCR Isolated Module
430 Amperes / 1800-2200 Volts
Revision Date: 4/19/2002
LS43__43
Electrical Characteristics, T
J
=25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
80
Units
Repetitive Peak Forward Leakage Current
I
DRM
Up to 2200V, T
J
=125°C
mA
Repetitive Peak Reverse Leakage Current
I
RRM
Up to 2200V, T
J
=125°C
80
mA
Peak On-State Voltage
V
FM
I
TM
=1500A
1.77
V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V
(TO)1
r
T1
T
J
= 130°C, I = 15%I
T(AV)
to
π
I
T(AV)
0.88
0.66
V
m
Threshold Voltage, High-level
Slope Resistance, High-level
V
(TO)2
r
T2
T
J
= 130°C, I =
π
I
T(AV)
to I
TSM
1.34
0.32
V
m
V
TM
Coefficients, Full Range
T
J
= 130°C, I = 10A to 6kA
V
TM
= A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D =
0.766
-1.046 E-02
1.805 E-05
2.00 E-02
Minimum dV/dt
dV/dt
Exponential to V
DRM
T
j
=130°C, Gate Open
1000 Typ.
V/μs
Gate Trigger Current
I
GT
T
j
=25°C, V
D
=12V
200
mA
Gate Trigger Voltage
V
GT
T
j
=25°C, V
D
=12V
3.0
Volts
Non-Triggering Gate Voltage
V
GDM
T
j
=130°C, V
D
= V
DRM
0.25
Volts
Peak Forward Gate Current
I
GTM
4.0
Amp
Peak Reverse Gate Voltage
V
GRM
5
Volts
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
R
Θ
J-C
Per Module/Junction
0.0650
°C/W
Thermal Impedance Coefficients
Z
Θ
J-C
Z
Θ
J-C
= K
1
(1-exp(-t/
τ
1
))
+ K
2
(1-exp(-t/
τ
2
))
+ K
3
(1-exp(-t/
τ
3
))
+ K
4
(1-exp(-t/
τ
4
))
Per Module
K
1
= 8.03E-04
K
2
= 1.03E-02
K
3
= 1.64E-02
K
4
= 3.75E-02
τ
1
= 3.39E-04
τ
2
= 3.15E-03
τ
3
= 0.106
τ
4
= 2.066
0.02
Thermal Resistance, Case to Sink Lubricated
R
Θ
C-S
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LS5301 | VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET |
| LS5905 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS5905-9 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS5906 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS5907 | LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LS4-35 | 功能描述:打印機(jī) LS4M, Continuous Tape, 0.50"x50’, RD/WH RoHS:否 制造商:Seiko Instruments 產(chǎn)品:Printer 電源電壓: 每行點(diǎn)數(shù):9 x 320 打印速度:52.5 cps, 80 cps 紙張寬度:112 mm |
| LS4350 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts) |
| LS4351 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-Channel Mosfet |
| LS4351_TO-72 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-Channel Mosfet |
| LS4352 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-Channel Mosfet |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。