參數(shù)資料
型號(hào)： LS5906
廠商： LINEAR INTEGRATED SYSTEMS INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
中文描述： SMALL SIGNAL, FET
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 30K
代理商： LS5906
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
3
BOTTOM VIEW
2
6
22 X 20 MILS
G1 S2
S1 G2
D2
D1
G1
S2
S1
G2
D1
D2
LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
FEATURES
LOW DRIFT
|
V
GS1-2
/
T|= 5
μ
V/
°
C max.
I
G
= 150fA TYP.
V
P
= 2V TYP.
ULTRA LOW LEAKAGE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
to +150
°
C
+150
°
C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
-V
DSO
-I
G(f)
-I
G
Gate Voltage to Drain or Source
40V
Drain to Source Voltage
40V
Gate Forward Current
Gate Reverse Current
10mA
10
μ
A
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
|
V
GS1-2
/
T| max. Drift vs. Temperature
LS5906 LS5907 LS5908 LS5909 LS5905 UNITS CONDITIONS
5
10
20
40
40
μ
V/
°
C
V
DG
= 10V, I
D
= 30
μ
A
T
A
=-55
°
C to +125
°
C
V
DG
=10V I
D
= 30
μ
A
|V
GS1-2
| max.
-I
G
max.
-I
G
max.
-I
GSS
max.
-I
GSS
max.
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
5
1
1
2
5
5
1
1
2
5
10
1
1
2
5
15
1
1
2
5
15
3
3
5
10
mV
pA
nA
pA
nA
T
A
= +125
°
C
V
DS
= 0V V
GS
= 20V
T
A
= +125
°
C
SYMBOL
BV
GSS
BV
GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
MIN.
40
40
TYP.
60
--
MAX.
--
--
UNITS CONDITIONS
V
V
DS
= 0
V
I
G
= 1nA
I
D
= 1nA
I
D
= 0
I
S
= 0
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
70
50
300
100
500
200
μ
mho
μ
mho
V
DG
= 10V
V
DG
= 10V
V
GS
= 0
I
D
= 30
μ
A
f= 1kHz
f= 1kHz
Mismatch
--
1
5
%
DRAIN CURRENT
Full Conduction
I
DSS
|I
DSS1-2
/I
DSS
|
60
400
1000
μ
A
V
DG
= 10V
V
GS
= 0
Mismatch at Full Conduction
--
2
5
%
GATE VOLTAGE
Pinchoff Voltage
Operating Range
V
GS
(off) or V
P
V
GS
0.6
--
2
--
4.5
4
V
V
V
DS
= 10V
V
DS
= 10V
I
D
= 1nA
I
D
= 30
μ
A
GATE CURRENT
Gate-to-Gate Leakage
I
GGO
--
1
--
pA
V
GG
=20V
相關(guān)PDF資料
PDF描述
LS5907 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
LS5908 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
LS5911-2 IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET
LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LS5906_PDIP 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
LS5906_SOIC 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
LS5906_SOT-23 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
LS5906_TO-71 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
LS5906_TO-78 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
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