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參數(shù)資料
| 型號： | LS350-2 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | MONOLITHIC DUAL PNP TRANSISTORS |
| 中文描述： | 整體式雙PNP晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | LS350-2 |
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
MATCHING CHARACTERISTICS
SYMBOL
|V
BE1
-V
BE2
|
CHARACTERISTICS
Base Emitter Voltage Differential
LS350
1
5
2
20
LS351
0.4
1.0
1
10
LS352
0.2
0.5
0.5
2
UNITS
TYP.
MAX.
TYP.
MAX.
CONDITIONS
I
C
= 10
μ
A
mV
mV
μ
V/
°
C
μ
V/
°
C
V
CE
= 5V
|(V
BE1
-V
BE2
)|/
°
C
Base Emitter Voltage Differential
Change with Temperature
I
C
=
10
μ
A
T
A
= -55
°
C to +125
°
C
I
C
= 10
μ
A
I
C
= 10
μ
A,
T
A
= -55
°
C to +125
°
C
I
C
= 10
μ
A
V
CE
= 5V
|I
B1
- I
B2
|
|
(I
B1
- I
B2
)|/
°
C
Base Current Differential
5
5
MAX.
nA
V
CE
= 5V
V
CE
= 5V
Base Current Differential
0.5
0.3
MAX.
nA/
°
C
Change with Temperature
h
FE1
/h
FE2
DC Current Gain Differential
10
5
5
TYP.
%
V
CE
= 5V
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
μ
A.
3. For LS350: V
CB
= 20V; for LS351 & LS352: V
CB
= 30V.
4. For LS351: V
CC
=
±
45V; for LS352: V
CC
=
±
80V; for LS350: V
CC
=
±
25V.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45°
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
DIM. A
0.165
0.185
0.040
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45°
1
2
34
5
6
7
8
0.029
0.045
SEATING
PLANE
C1 1
B1
E1
N/C
2
3
4
5
6
7
8
N/C
C2
B2
E2
P-DIP
C1 1
B1
E1
N/C
2
3
4
5
6
7
8
N/C
C2
B2
E2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
(10.29)
MAX.
(4.78)
(5.00)
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|---|---|
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