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參數(shù)資料
| 型號： | LS350-2 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | MONOLITHIC DUAL PNP TRANSISTORS |
| 中文描述： | 整體式雙PNP晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 29K |
| 代理商： | LS350-2 |
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
C1
3
BOTTOM VIEW
2
6
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
LS350 LS351 LS352
25
25 45
6.2
30 60
100
UNITS
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
CONDITIONS
I
C
= 10
μ
A
I
C
= 10
μ
A
I
E
= 10
μ
A I
C
= 0 NOTE 2
I
C
= 10
μ
A
I
C
= 10
μ
A
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector to Collector Voltage
DC Current Gain
45
60
60
6.2
100
200
600
200
600
200
0.5
0.2
0.2
2
2
0.5
200
3
V
V
V
V
I
E
= 0
I
B
= 0
6.2
I
E
= 0
V
CE
= 5V
150
600
150
600
150
0.5
0.2
0.2
2
2
0.5
200
3
h
FE
DC Current Gain
100
I
C
= 100
μ
A
V
CE
= 5V
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
100
0.5
0.2
0.2
2
2
0.5
200
3
I
C
= 1mA,
I
C
= 1mA
I
E
= 0
I
C
= 0
I
E
= 0
V
CC
= 0
V
CC
= NOTE4
I
C
= 1mA
I
C
= 100
μ
A
BW = 200Hz R
G
= 10 K
f = 1KHz
V
CE
= 5V
I
B
= 0.1mA
V
nA
nA
pF
pF
nA
MHz
dB
V
CB
= NOTE 3
V
EB
=3V
V
CB
= 5V
V
CE
= 5V
V
CE
= 5V
B1 E1 E2 B2
C1
C2
26 X 29 MILS
E1
E2
C2
B1
B2
LS350 LS351 LS352
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
HIGH GAIN
TIGHT V
BE
MATCHING
HIGH f
T
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
I
C
h
FE
≥
200 @ 10
μ
A - 1mA
|V
BE1
-V
BE2
| = 0.2mV TYP.
275MHz TYP. @ 1mA
Collector Current
10mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
to +200
°
C
+150
°
C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
Linear Derating Factor
250mW
2.3mW/
°
C
500mW
4.3mW/
°
C
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