參數(shù)資料
型號(hào): LPV3000
英文描述: 2W Power PHEMT
中文描述: 2W的功率PHEMT器件
文件頁數(shù): 2/2頁
文件大?。?/td> 49K
代理商: LPV3000
Filtronic
Solid State
LP3000/LPV3000
2W Power PHEMT
Phone:
(408) 988-1845
Internet:
http://www.filtronicsolidstate.com
Fax:
(408) 970-9950
ABSOLUTE MAXIMUM RATINGS
(25
°
C)
SYMBOL
PARAMETER
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
DS
Drain-Source Current
I
G
Gate Current
P
IN
RF Input Power
T
CH
Channel Temperature
T
STG
Storage Temperature
P
T
Power Dissipation
RECOMMENDED CONTINUOUS
OPERATING LIMITS
SYMBOL
PARAMETER
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
DS
Drain-Source Current
I
G
Gate Current
P
IN
RF Input Power
T
CH
Channel Temperature
T
STG
Storage Temperature
P
T
Power Dissipation
G
XdB
Gain Compression
RATING
1
12V
-5V
2 x I
DSS
120 mA
1.2 W
175
°
C
-65/175
°
C
6.0W
3,4
RATING
2
8V
-1V
0.8 x I
DSS
40 mA
600 mW
150
°
C
-20/50
°
C
5.0 W
3,4
8 dB
NOTES:
1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: P
T
(P
DC
+ P
IN
) - P
OUT
, where: P
DC
= DC bias power, P
OUT
= RF output power, and
P
IN
= RF input power.
4. Power Dissipation to be de-rated as follows:
5. Specifications subject to change without notice.
6.0
Example #1 :
V
DS
= 8V, I
DS
= 535 mA
P
IN
= P
OUT
= 0 dBm (quiescent condition):
P
T
= P
DC
= 4.28W
Max. continuous T
HS
= 25
°
C
Example #2:
V
DS
= 8V, I
DS
= 535 mA
P
IN
= 26.5 dBm P
OUT
= 33.5 dBm
P
T
= (4.28+0.45) - 2.24 = 2.49W
Max. continuous T
HS
= 88
°
C
HANDLING PRECAUTIONS:
PHEMT chips should be stored in a dry nitrogen environment until assembly. Care should be exercised during handling to
avoid damage to the devices. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of
storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500V), and further information
on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
ASSEMBLY INSTRUCTIONS:
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-
290
°
C; maximum time at temperature is 1 min. The recommended wire bond method is thermo-compression wedge
bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260
°
C.
APPLICATIONS NOTES AND DESIGN DATA:
Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete design
data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5” diskette, or may be down-loaded
from our Web Page.
DSS-027 WG
相關(guān)PDF資料
PDF描述
LQ020A4FS01 Consumer IC
LQ025A4FS02 Consumer IC
LQ035A3FR23 Consumer IC
LQ035Q7DB02
LQ038Q5DR01 TFT Displays|Product Briefs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LPV321 制造商:TI 制造商全稱:Texas Instruments 功能描述:GENERAL-PURPOSE, LOW-VOLTAGE, LOW-POWER,RAIL TO RAIL OUTPUT OPERATIONAL AMPLIFIERS
LPV321_07 制造商:TI 制造商全稱:Texas Instruments 功能描述:GENERAL-PURPOSE, LOW-VOLTAGE, LOW-POWER,RAIL TO RAIL OUTPUT OPERATIONAL AMPLIFIERS
LPV321DBVR 功能描述:運(yùn)算放大器 - 運(yùn)放 Single Low-Voltage Low Power RRO RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比(最小值):63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流(最大值):10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel
LPV321DBVRE4 功能描述:運(yùn)算放大器 - 運(yùn)放 Single Low-Voltage Low Power RRO RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比(最小值):63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流(最大值):10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel
LPV321DBVRG4 功能描述:運(yùn)算放大器 - 運(yùn)放 Sgl Lo Vltg Lo Pwr RRO RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比(最小值):63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流(最大值):10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel