參數(shù)資料
型號(hào)： LPV3000
英文描述： 2W Power PHEMT
中文描述： 2W的功率PHEMT器件
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 49K
代理商： LPV3000
Filtronic
Solid State
LP3000/LPV3000
2W Power PHEMT
Phone:
(408) 988-1845
Internet:
http://www.filtronicsolidstate.com
Fax:
(408) 970-9950
FEATURES
+33.5 dBm Typical Power at 18 GHz
7 dB Typical Power Gain at 18 GHz
+30.5 dBm at 3.3V Battery Voltage
Low Intermodulation Distortion
45% Power-Added-Efficiency at 18 GHz
DIE SIZE: 28.3 x 16.5 mils (720 x 420
μ
m)
DIE THICKNESS: 2.6 mils (65
μ
m typ.)
BONDING PADS: 1.9 x 2.4 mils (50 x 60
μ
m typ.)
DESCRIPTION AND APPLICATIONS
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron
Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25
μ
m by 3000
μ
m Schottky barrier gate. The
recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and
processing have been optimized for reliable high-power applications. The LP3000 also features Si
3
N
4
passivation and is
available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in
a ceramic flanged package (P100) and ball grid array package.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The
LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (T
A
= 25
°
C)
SYMBOLS
PARAMETERS
I
DSS
Saturated Drain-Source Current
V
DS
= 2V V
GS
= 0V
P
1dB
Output Power at 1dB Gain Compression
V
DS
= 8.0V, I
DS
= 50% I
DSS
(LP. LPV)
f= 18 GHz
G
1dB
Power Gain at 1dB Gain Compression
V
DS
= 8.0V, I
DS
= 50% I
DSS
(LP) f= 18 GHz
V
DS
= 8.0V, I
DS
= 50% I
DSS
(LPV)
f= 18 GHz
η
ADD
Power-Added Efficiency (typ. for Class A operation)
I
MAX
Maximum Drain-Source Current
G
M
Transconductance
V
P
Pinch-Off Voltage
I
GSO
Gate-Source Leakage Current
BV
GS
Gate-Source Breakdown Voltage
BV
GD
Gate-Drain Breakdown Voltage
Θ
J
Thermal Resistivity
MIN
800
TYP
1060
MAX
1100
UNITS
mA
33.0
33.5
dBm
4.0
6.0
6.0
7.0
45
1700
900
-1.2
15
-15
-16
20
dB
dB
%
mA
mS
V
μ
A
V
V
°
C/W
V
DS
= 2V V
GS
= +1V
V
DS
= 2V V
GS
= 0V
V
DS
= 2V I
DS
= 10mA
V
GS
= -5V
I
GS
= 15mA
I
GD
= 15mA
725
-0.25
-2.0
125
-12
-12
DSS-027 WG
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