參數(shù)資料
型號: LPC2888FET180
廠商: NXP SEMICONDUCTORS
元件分類: 微控制器/微處理器
英文描述: 16/32-bit ARM microcontrollers; 8 kB cache, up to 1 MB flash, Hi-Speed USB 2.0 device, and SDRAM memory interface
中文描述: 32-BIT, FLASH, 60 MHz, RISC MICROCONTROLLER, PBGA180
封裝: 10 X 10 MM, 0.80 MM HEIGHT, PLASTIC, MO-195, SOT-640-1, TFBGA-180
文件頁數(shù): 26/34頁
文件大?。?/td> 139K
代理商: LPC2888FET180
LPC2880_LPC2888_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01 — 22 June 2006
26 of 34
Philips Semiconductors
LPC2880; LPC2888
16/32-bit ARM microcontrollers with external memory interface
7.
Limiting values
[1]
The following applies to
Table 5
:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to V
SS
unless
otherwise noted.
[2]
All inputs are 5 V tolerant except external memory bus and USB pins.
[3]
Including voltage on outputs in 3-state mode.
[4]
5 V tolerant pins
[5]
Other I/O pins.
[6]
Per supply pin.
[7]
Per ground pin.
[8]
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
series resistor.
Machine model: equivalent to discharging a 200 pF capacitor through a 0.75
μ
H coil and a 10
series resistor.
[9]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
Parameter
V
DD(1V8)
supply voltage (1.8 V)
V
DD(3V3)
supply voltage (3.3 V)
V
DD(EMC)
external memory controller
supply voltage
Limiting values
Conditions
Min
0.5
0.5
0.5
0.5
0.5
Max
+1.95
+3.6
+1.95
+3.6
V
VDD(ADC3V3)
+5.0
+3.6
<tbd>
<tbd>
+125
<tbd>
Unit
V
V
V
V
V
V
V
mA
mA
°
C
W
in 1.8 V range
in 3.3 V range
V
IA
V
I
analog input voltage
input voltage
[2][3][4]
0.5
[2][3][5]
0.5
[6]
<tbd>
I
DD
I
SS
T
stg
P
tot(pack)
supply current
ground current
storage temperature
total power dissipation (per
package)
[7]
<tbd>
40
-
based on package
heat transfer, not
device power
consumption
human body model
all pins
machine model
all pins
V
esd
electrostatic discharge voltage
[8]
2000
+2000
V
[9]
200
+200
V
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