參數(shù)資料
型號(hào): LP87C54
廠商: INTEL CORP
元件分類: 微控制器/微處理器
英文描述: CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 16 KBYTES USER PROGRAMMABLE EPROM
中文描述: 8-BIT, OTPROM, 12 MHz, MICROCONTROLLER, PDIP40
封裝: PLASTIC, DIP-40
文件頁數(shù): 15/20頁
文件大?。?/td> 290K
代理商: LP87C54
AUTOMOTIVE 87C54/87C54-20
Normally EA/V
PP
is held at logic high until just be-
fore ALE/PROG is to be pulsed. Then EA/V
PP
is
raised to V
PP
, ALE/PROG is pulsed low, and then
EA/V
PP
is returned to a valid high voltage. The volt-
age on the EA/V
PP
pin must be at the valid EA/V
PP
high level before a verify is attempted. Waveforms
and detailed timing specifications are shown in later
sections of this data sheet.
Note that the EA/V
PP
pin must not be allowed to go
above the maximum specified V
PP
level for any
amount of time. Even a narrow glitch above that volt-
age level can cause permanent damage to the de-
vice. The V
PP
source should be well regulated and
free of glitches.
270849–19
*
See Table 3 for proper input on these pins
Figure 11. Programming the EPROM
Quick Pulse Programming Algorithm
The 87C54 can be programmed using the Quick
Pulse Programming Algorithm for microcontrollers.
The features of the new programming method are a
lower V
PP
(12.75V as compared to 21V) and a short-
er programming pulse. It is possible to program the
entire 16K bytes of EPROM memory in less than 50
seconds with this algorithm!
To program the part using the new algorithm, V
PP
must be 12.75V
g
0.25V. ALE/PROG is pulsed low
for 100
m
s, 25 times as shown in Figure 12. Then,
the byte just programmed may be verified. After pro-
gramming, the entire array should be verified. The
Program Lock features are programmed using the
same method, but with the setup as shown in Table
3. The only difference in programming Program Lock
features is that the Program Lock features cannot be
directly verified. Instead, verification of programming
is by observing that their features are enabled.
Program Verification
If the Program Lock Bits have not been pro-
grammed, the on-chip Program Memory can be read
out for verification purposes, if desired, either during
or after the programming operation. The address of
the Program Memory location to be read is applied
to Port 1 and pins P2.0–P2.5. The other pins should
be held at the ‘‘Verify’’ levels indicated in Table 3.
The contents of the addressed locations will come
out on Port 0. External pullups are required on Port 0
for this operation.
If the Encryption Array in the EPROM has been pro-
grammed, the data present at Port 0 will be Code
Data XNOR Encryption Data. The user must know
the Encryption Array contents to manually ‘‘unen-
crypt’’ the data during verify.
The setup, which is shown in Figure 13, is the same
as for programming the EPROM except that pin P2.7
is held at a logic low, or may be used as an active
low read strobe.
15
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