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參數(shù)資料
| 型號(hào)： | LP62E16256EV-70LLT |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 256K X 16 BIT LOW VOLTAGE CMOS SRAM |
| 中文描述： | 256 × 16位低電壓CMOS的SRAM |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大?。?/td> | 164K |
| 代理商： | LP62E16256EV-70LLT |
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LP62E16256E-T Series
PRELIMINARY
(July, 2002, Version 0.0)
4
AMIC Technology, Inc.
Absolute Maximum Ratings*
VCC to GND ..............................................-0.5V to +3.0V
IN, IN/OUT Volt to GND ................... -0.5V to VCC + 0.5V
Operating Temperature, Topr ...................-25
°C to +85°C
Storage Temperature, Tstg.....................-55
°C to +125°C
Power Dissipation, PT ...................................................................... 0.7W
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended.
Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics (TA = -25
°C to + 85°C, VCC = 1.65V to 2.2V, GND = 0V)
Symbol
Parameter
LP62E16256E-70LLT
Unit
Conditions
Min.
Max.
ILI
Input Leakage Current
-
1
A
VIN = GND to VCC
ILO
Output Leakage Current
-
1
A
CE = VIH
HB = VIH or OE = VIH or
WE = VIH
VI/O = GND to VCC
ICC
Active Power Supply Current
-
5
mA
CE = VIL, II/O = 0mA
ICC1
-
30
mA
* Min. Cycle, Duty = 100%
Dynamic Operating
CE = VI, II/O = 0mA
ICC2
Current
-
10
mA
CE = VIL, VIH = VCC,
VIL = 0V, f = 1MHz,
II/O = 0 mA
ISB
-
0.5
mA
CE = VIH
ISB1
Standby Current
-
10
A
CE
≥ VCC - 0.2V,
VIN
≥ 0V
VOL
Output Low Voltage
-
0.2
V
IOL = 0.1 mA
VOH
Output High Voltage
1.4
-
V
IOH = -0.1 mA
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