參數(shù)資料
型號: LP61L1008AS-8
廠商: AMIC Technology Corporation
元件分類: SRAM
英文描述: 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM
中文描述: 128K的× 8位高速3.3V的中心功耗CMOS SRAM
文件頁數(shù): 11/11頁
文件大?。?/td> 118K
代理商: LP61L1008AS-8
LP61L1008A
PRELIMINARY
(August, 2001, Version 1.0)
9
AMIC Technology, Inc.
AC Test Conditions
Input Pulse Levels
0V to 3.0V
Input Rise and Fall Time
3 ns
Input and Output Timing Reference Levels
1.5V
Output Load
See Figures 1 and 2
+3.3V
I/O
350
320
5pF*
* Including scope and jig.
ZO=50
Output
RL=50
VT=1.5V
Figure 1. Output Load
Figure 2. Output Load for tCLZ,
tOHZ, tOLZ, tCHZ, tWHZ,
and tOW
Data Retention Characteristics (TA = 0
°C to 70°C)
Symbol
Parameter
Min.
Max.
Unit
Conditions
VDR1
VCC for Data Retention
2
3.6
V
CE
≥ VCC - 0.2V
ICCDR1
Data Retention Current
-
3
mA
VCC = 2V
CE
≥ VCC - 0.2V
VIN
≥ VCC - 0.2V or
VIN
≤ 0.2V
tCDR
Chip Disable to Data Retention Time
0
-
ns
See Retention Waveform
tR
Operation Recovery Time
5
-
ms
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