參數(shù)資料
型號: LNA4401L
廠商: PANASONIC CORP
元件分類: 紅外LED
英文描述: GaAlAs Infrared Light Emitting Diode
中文描述: 4.6 mm, 1 ELEMENT, INFRARED LED, 860 nm
封裝: MTGLR102-001, TO-18, 2 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 35K
代理商: LNA4401L
1
Infrared Light Emitting Diodes
LNA4401L
GaAlAs Infrared Light Emitting Diode
Glass lens
6
±
0
1: Anode
2: Cathode
Unit : mm
10
±
02
10
±
015
4.6
±
0.15
2.54
±
0.25
5.75 max.
2-0.45
±
0.05
1
4
±
3
1
2
For optical control systems
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
190
100
1
3
–25 to +85
–30 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Features
High-power output, high-efficiency : P
O
= 10 mW (typ.)
Fast response and high-speed modulation capability :
f
C
= 20 MHz (typ.)
TO-18 standard type package
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
C
t
θ
f
C*
Conditions
min
6
typ
10
860
40
1.6
max
Unit
mW
nm
nm
V
μ
A
pF
deg.
MHz
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Cutoff frequency
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.9
10
The angle in which radiant intencity is 50%
I
FP
= 50mA + 10mA
p-p
6
20
*
Frequency when modulation optical power decreases by 3dB from 1MHz.
10 log P
O
(f
C
MHz)
= – 3
)
P
O
(1MHz)
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