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參數(shù)資料
| 型號(hào)： | LNA4602L |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs Infrared Light Emitting Diode |
| 中文描述： | 3.5 mm, 1 ELEMENT, INFRARED LED, 850 nm |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 21K |
| 代理商： | LNA4602L |
Infrared Light Emitting Diodes
LNA4602L
GaAlAs Infrared Light Emitting Diode
1
For optical control systems
I
Features
High-power output, high-efficiency
Light-emitting pattern of almost point source
Ultra-miniature, thin side-view type package
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Ratings
Unit
Pulse forward current
*
I
FP
V
R
T
opr
T
stg
1.2
A
Reverse voltage (DC)
3
V
Operating ambient temperature
20 to
+
60
30 to
+
70
°
C
°
C
Storage temperature
Parameter
Symbol
Conditions
min
typ
max
Unit
Radiant power
P
O
λ
P
λ
I
F
=
50 mA
I
F
=
50 mA
I
F
=
50 mA
I
F
=
50 mA
I
FP
=
1 A, t
W
=
0.14 ms
V
R
=
3 V
3
mW
Peak emission wavelength
850
nm
Spectral half band width
35
nm
Forward voltage (DC)
V
F
V
FP
I
R
θ
1.5
1.9
V
Peak forward voltage
2.9
3.8
V
Reverse current (DC)
100
μ
A
°
Half-power angle
The angle in which radiant intencity is 50%
30
I
Electro-optical Characteristics
T
a
=
25
°
C
1: Cathode
2: Anode
2. Frequency that the modulated total output power decreases by 3 dB from that of at 1 MHz.
Cut-off Frequcency: 200 MHz f
C
: 10 log P
O
(f
C
MHz)
=
3
P
O
(1 MHz)
4.5
±
0.3
4.2
±
0.3
2.3
1.9
2.54
±
0.25
2
0.45
±
0.15
0.45
±
0.15
2
0.98
±
0.2
2.54
2
1
1
2
1
1.66
±
0.25
1.2
2
2
4
±
0
φ
3
±
0
N
1
R1.75
±
0.1
32 ms
1 s (1 shot)
f
=
500 Hz, Duty
=
7%
Note) *: f = 100 Hz, Duty Cycle
=
0.1%
Note) 1.
P
O
≤
35% at t
=
10 000 shot
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