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| 型號： | LN55 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs Infrared Light Emitting Diode |
| 中文描述： | 3.5 mm, 1 ELEMENT, INFRARED LED, 950 nm |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | LN55 |
1
Infrared Light Emitting Diodes
LN55
GaAs Infrared Light Emitting Diode
I
F
— Ta
60
50
40
30
20
10
Ambient temperature Ta (C )
A
F
0
20
40
60
80
100
0
– 25
I
FP
— Duty cycle
10
2
10
1
10
–1
10
–2
Duty cycle (%)
P
F
10
–1
10
10
2
1
10
–3
10
–2
Ta = 25C
I
F
— V
F
80
70
60
50
40
20
10
30
0
Forward voltage V
F
(V)
Ta = 25C
F
F
0
0.4
0.8
1.2
1.6
2.3
1.9
4.5
±
0.3
2.54
1.2
4.2
±
0.3
3.5
±
0.2
4
±
0
2
2
2
1
1
1
1
0.45
±
0.15
2-0.45
±
0.15
2-0.98
±
0.2
R1.75
N
1: Cathode
2: Anode
Unit : mm
1
2
For optical control systems
Features
High-power output, high-efficiency : P
O
= 3.5 mW (typ.)
Suited for use with silicon photodetectors
Infrared light emission close to monochromatic light :
λ
P
= 950 nm (typ.)
High-speed modulation capability
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
–25 to +85
–30 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
C
t
θ
Conditions
min
1.8
typ
3.5
950
50
max
Unit
mW
nm
nm
V
μ
A
pF
deg.
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.5
10
50
35
The angle in which radiant intencity is 50%
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