參數(shù)資料
型號(hào): LN65
廠商: PANASONIC CORP
元件分類: 紅外LED
英文描述: GaAs Infrared Light Emitting Diode
中文描述: 3.5 mm, 1 ELEMENT, INFRARED LED, 950 nm
封裝: ROHS COMPLIANT PACKAGE-2
文件頁數(shù): 1/3頁
文件大小: 44K
代理商: LN65
1
Infrared Light Emitting Diodes
LN65
GaAs Infrared Light Emitting Diode
2.3
1.9
4.5
±
0.3
2.54
1.2
4.2
±
0.3
3.5
±
0.2
4
±
0
2
2
2
1
1
1
1
0.45
±
0.15
2-0.45
±
0.15
2-0.98
±
0.2
R1.75
N
1: Cathode
2: Anode
Unit : mm
1
2
For optical control systems
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
1.5
3
–25 to +85
– 40 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Features
High-power output, high-efficiency : P
O
= 5.5 mW (typ.)
Good radiant power output linearity with respect to input current
Suited for use in high-speed modulation
Infrared light emission close to monochromatic light :
λ
P
= 950 nm (typ.)
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
C
t
θ
Conditions
min
4.3
typ
5.5
950
50
1.3
max
Unit
mW
nm
nm
V
μ
A
pF
deg.
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.6
10
50
35
The angle in which radiant intencity is 50%
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