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參數(shù)資料
| 型號： | LN54 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs Infrared Light Emitting Diode |
| 中文描述： | 2.2 mm, 1 ELEMENT, INFRARED LED, 950 nm |
| 封裝： | LSTLR102-001, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 44K |
| 代理商： | LN54 |
1
Infrared Light Emitting Diodes
LN54
GaAs Infrared Light Emitting Diode
2.54
4.5
±
0.3
3
±
0
1
2
2
1
N
2-0.45
±
0.15
0.45
±
0.15
1.2
2.9
±
0.25
1.7
±
0.2
0.8
0.9
2-1.2
±
0.3
R0.8
1
2
R0.6
1: Cathode
2: Anode
Unit : mm
2.2
For optical control systems
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
–25 to+85
–30 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Features
High-power output, high-efficiency : P
O
= 4.6 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Infrared light emission close to monochromatic light :
λ
P
= 950 nm (typ.)
Small size, thin side-view type package
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
C
t
θ
Conditions
min
2.5
typ
4.6
950
50
max
Unit
mW
nm
nm
V
μ
A
pF
deg.
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.5
10
35
17
The angle in which radiant intencity is 50%
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