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參數(shù)資料
| 型號： | LN172 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs Infrared Light Emitting Diode |
| 中文描述： | 4.2 mm, 1 ELEMENT, INFRARED LED, 900 nm |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 171K |
| 代理商： | LN172 |
1
Infrared Light Emitting Diodes
1.0
±
0.15
2.54
±0.25
1
2
4.2
5.35
2-0.45
±0.05
0.25
±0.1
1.2
±0.1
2.4
±0.3
12.7
min.
Unit : mm
1.0
±0.15
45
±
3
1: Cathode
2: Anode
+0.2 –0.1
+0.2
–0.1
LN172
GaAlAs Infrared Light Emitting Diode
For optical control systems
Absolute Maximum Ratings (Ta = 25C)
Parameter
Symbol
Ratings
Unit
Power dissipation
PD
170
mW
Forward current (DC)
IF
100
mA
Pulse forward current
IFP*
2A
Reverse voltage (DC)
VR
3V
Operating ambient temperature
Topr
–25 to +85
C
Storage temperature
Tstg
–30 to +100
C
* f = 100 Hz, Duty cycle = 0.1 %
Features
High-power output, high-efficiency : PO = 12 mW (typ.)
Light emitting spectrum suited for silicon photodetectors :
λ
P = 900 nm (typ.)
Good optical power output linearity with respect to input current
Wide directivity :
θ = 100 deg. (typ.)
Long lifetime, high reliability
Electro-Optical Characteristics (Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Radiant power
PO
IF = 100mA
7
12
mW
Peak emission wavelength
λ
P
IF = 100mA
900
nm
Spectral half band width
λ
IF = 100mA
70
nm
Forward voltage (DC)
VF
IF = 100mA
1.4
1.7
V
Reverse current (DC)
IR
VR = 3V
10
A
Capacitance between pins
Ct
VR = 0V, f = 1MHz
50
pF
Response time
tr, tf
IF = 100mA
700
ns
Half-power angle
θ
The angle in which radiant intencity is 50%
100
deg.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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