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參數(shù)資料
| 型號(hào)： | LN175 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAlAs Infrared Light Emitting Diode |
| 中文描述： | 3.5 mm, 1 ELEMENT, INFRARED LED, 900 nm |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 342K |
| 代理商： | LN175 |
SHC00004DED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009
1
Infrared Light Emitting Diodes
LN175
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efciency: PO = 12 mW (typ.)
Emitted light spectrum suited for silicon photodetectors: λP = 900 nm (typ.)
Good radiant power output linearity with respect to input current
Wide directivity: θ = 120° (typ.)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD
170
mW
Forward current
IF
100
mA
Pulse forward current *
IFP
2
A
Reverse voltage
VR
3
V
Operating ambient temperature
Topr
–25 to +85
°
C
Storage temperature
Tstg
–40 to +100
°
C
Note) *: f = 100 Hz, Duty cycle = 0.1%
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Radiant power *
PO
IF = 100 mA
7.0
12.0
mW
Reverse current
IR
VR = 3 V
10
A
Forward voltage
VF
IF = 100 mA
1.4
1.7
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
50
pF
Peak emission wavelength
λP
IF = 100 mA
900
nm
Spectral half band width
Δλ
IF = 100 mA
70
nm
Rise time
tr
IFP = 100 mA
700
ns
Fall time
tf
IFP = 100 mA
700
ns
Half-power angle
θ
The angle when the radiant power is halved.
120
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Cutoff frequency: 0.55 MHz
fC : 10 × log
PO at f = fC
= –3
PO at f = 1 MHz
3. *: A light detection element uses a silicon diode have proofread a load with a standard device.
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