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參數(shù)資料
| 型號： | LMX2542 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | PLLatinum Cellular and GPS Frequency Synthesizer System with Integrated VCO |
| 中文描述： | PLLatinum蜂窩頻率合成器和GPS系統(tǒng)的集成VCO |
| 文件頁數(shù)： | 6/22頁 |
| 文件大?。?/td> | 253K |
| 代理商： | LMX2542 |
Absolute Maximum Ratings
(Notes 1, 2,
3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
to GND
V
DD
to GND
Voltage on any pin to GND (V
IN
)
V
IN
must be
<
+3.6V
0.3V to +3.6V
0.3V to +3.6V
0.3V to V
CC
+0.3V
0.3V to V
DD
+0.3V
65C to +150C
Storage Temperature Range (T
S
)
Lead Temperature (solder 4 s) (T
L
)
+260C
Recommended Operating
Conditions
Power Supply Voltage
V
CC
to GND
V
DD
to GND
Operating Temperature (T
A
)
+2.7V to +3.3V
+2.7V to +3.3V
30C to +85C
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, refer to the Electrical Characteristics section. The guaranteed specifi-
cations apply only for the conditions listed.
Note 2:
This device is a high performance RF integrated circuit with an ESD
rating
<
2kV and is ESD sensitive. Handling and assembly of this device
should be done at ESD protected work stations.
Note 3:
GND = 0V.
Electrical Characteristics
V
CC
= V
DD
= CE = 2.8V, T
A
= +25C, unless otherwise specified
Symbol
Parameter
Conditions
Value
Typ
Units
Min
Max
Icc PARAMETERS
I
CC
+ I
DD
Power Supply Current
(RF and IF Synthesizer Systems)
RF_EN Bit = 1
IF_EN Bit = 1
OB_CRL[1:0] Word = 00
VCO_CUR[1:0] Word = 11
IF_CUR[1:0] Word = 00
RF_EN Bit = 1
IF_EN Bit = 0
OB_CRL[1:0] Word = 00
VCO_CUR[1:0] Word = 11
CE, CLK, DATA and LE = 0V
OSCin = 0V
(RF_EN Bit = 0 and IF_EN Bit = 0)
22.0
24.0
mA
(I
CC
+
I
DD
)
RF
Power Supply Current
(RF Synthesizer System)
20.0
22.0
mA
I
PD
Powerdown Current
20.0
μA
RF SYNTHESIZER SYSTEM PARAMETERS
RF VCO
f
RFout
RF VCO Operating Frequency
(Notes 4, 5)
p
RFout
RF VCO Output Power
2087.73
2155.14
MHz
OB_CRL[1:0] Word = 00
OB_CRL[1:0] Word = 01
OB_CRL[1:0] Word = 10
OB_CRL[1:0] Word = 11
7.5
5.0
2.5
0.0
4.5
2.0
0.5
3.0
1.3
109
1.5
1.0
3.5
6.0
dBm
dBm
dBm
dBm
Deg.
dBc/
Hz
φ
eRF
L
RF
(f)
RF VCO RMS Phase Error
RF VCO Single Side Band Phase
Noise
f = 100 kHz Offset
TCXO Reference Source
OSC_FREQ Bit = 0 or 1
OB_CRL[1:0] Word = 11
IF_EN Bit = 0
f = 900 kHz Offset
TCXO Reference Source
OSC_FREQ Bit = 0 or 1
OB_CRL[1:0] Word = 11
IF_EN Bit = 0
107
134
–133
dBc/
Hz
L
www.national.com
6
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