參數(shù)資料
型號: LM5105
廠商: National Semiconductor Corporation
英文描述: 100V Half Bridge Gate Driver with Programmable Dead-time
中文描述: 100V的半橋柵極驅(qū)動器,具有可編程死區(qū)時間
文件頁數(shù): 4/12頁
文件大小: 743K
代理商: LM5105
Electrical Characteristics
Specifications in standard typeface are for T
J
= +25C, and those in
boldface type
apply over the full
operating junction temperature range
. Unless otherwise specified, V
DD
= HB = 12V, V
SS
= HS = 0V, EN
= 5V. No load on LO or HO. RDT= 100k
(Note 4). (Continued)
Symbol
I
OLH
THERMAL RESISTANCE
θ
JA
Parameter
Conditions
Min
Typ
1.6
Max
Units
A
Peak Pulldown Current
HO = 12V
Junction to Ambient
(Note 3), (Note 5)
40
C/W
Switching Characteristics
type
apply over the full
operating junction temperature range
. Unless otherwise specified, V
DD
= HB = 12V, V
SS
= HS =
0V, No Load on LO or HO (Note 4).
Specifications in standard typeface are for T
J
= +25C, and those in
boldface
Symbol
t
LPHL
t
HPHL
t
LPLH
t
HPLH
t
LPLH
t
HPLH
t
en
, t
sd
DT1, DT2
Parameter
Conditions
Min
Typ
26
26
595
595
105
105
28
570
80
50
15
50
Max
56
56
705
705
150
150
Units
ns
ns
ns
ns
ns
ns
ns
μs
Lower Turn-Off Propagation Delay
Upper Turn-Off Propagation Delay
Lower Turn-On Propagation Delay
Upper Turn-On Propagation Delay
Lower Turn-On Propagation Delay
Upper Turn-On Propagation Delay
Enable and Shutdown propagation delay
Dead-time LO OFF to HO ON & HO OFF
to LO ON
RDT = 100k
RDT = 100k
RDT = 10k
RDT = 10k
485
485
75
75
RDT = 100k
RDT = 10k
RDT = 100k
C
L
= 1000pF
I
F
= 20 mA, I
R
= 200 mA
MDT
t
R
, t
F
t
BS
Dead-time matching
Either Output Rise/Fall Time
Bootstrap Diode Turn-On or Turn-Off Time
ns
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2:
The human body model is a 100 pF capacitor discharged through a 1.5k
resistor into each pin. Pin 2, Pin 3 and Pin 4 are rated at 500V.
Note 3:
4 layer board with Cu finished thickness 1.5/1.0/1.0/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm ground and power
planes embedded in PCB. See Application Note AN-1187.
Note 4:
Min and Max limits are 100% production tested at 25C. Limits over the operating temperature range are guaranteed through correlation using Statistical
Quality Control (SQC) methods. Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
Note 5:
The
θ
JA
is not a constant for the package and depends on the printed circuit board design and the operating conditions.
Note 6:
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed -1V.
However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently.
If negative transients occur on HS, the HS voltage must never be more negative than V
DD
- 15V. For example, if V
DD
= 10V, the negative transients at HS must not
exceed -5V.
L
www.national.com
4
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