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參數(shù)資料
| 型號： | LM5104SDX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 外設及接口 |
| 英文描述： | High Voltage Half-Bridge Gate Driver with Adaptive Delay |
| 中文描述： | 1.8 A HALF BRIDGE BASED PRPHL DRVR, DSO10 |
| 封裝： | 4 X 4 MM, LLP-10 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 375K |
| 代理商： | LM5104SDX |
Startup and UVLO
(Continued)
Diode Power Dissipation V
IN
= 40V
20089008
The total IC power dissipation can be estimated from the
above plots by summing the gate drive losses with the
bootstrap diode losses for the intended application. Because
the diode losses can be significant, an external diode placed
in parallel with the internal bootstrap diode (refer to
Figure 4
)
can be helpful in removing power from the IC. For this to be
effective, the external diode must be placed close to the IC to
minimize series inductance and have a significantly lower
forward voltage drop than the internal diode.
20089009
FIGURE 4. LM5104 Driving MOSFETs Connected in Synchronous Buck Configuration
L
www.national.com
10
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LM5104SDX/NOPB | 功能描述:功率驅動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5105 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:100V Half Bridge Gate Driver with Programmable Dead-time |
| LM5105BSD/NOPB | 制造商:Texas Instruments 功能描述: |
| LM5105SD | 功能描述:功率驅動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5105SD/NOPB | 功能描述:功率驅動器IC 100V HALF-BRIDGE DRIVER W/ DELAY RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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