參數(shù)資料
型號(hào)： LM5104MX
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 外設(shè)及接口
英文描述： High Voltage Half-Bridge Gate Driver with Adaptive Delay
中文描述： 1.8 A HALF BRIDGE BASED PRPHL DRVR, PDSO8
封裝： MS-012AA, SOIC-8
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 375K
代理商： LM5104MX
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD
to V
SS
V
HB
to V
HS
IN to V
SS
LO Output
HO Output
V
HS
to V
SS
V
HB
to V
SS
RT to V
SS
Junction Temperature
–0.3V to +18V
–0.3V to +18V
–0.3V to V
DD
+ 0.3V
–0.3V to V
DD
+ 0.3V
V
HS
– 0.3V to V
HB
+ 0.3V
1V to +100V
118V
–0.3V to 5V
+150C
Storage Temperature Range
ESD Rating HBM
(Note 2)
–55C to +150C
2 kV
Recommended Operating
Conditions
V
DD
HS
HB
HS Slew Rate
Junction Temperature
+9V to +14V
–1V to 100V
V
HS
+ 8V to V
HS
+ 14V
<
50V/ns
–40C to +125C
Electrical Characteristics
type
apply over the full
operating junction temperature range
. Unless otherwise specified, V
DD
= V
HB
= 12V, V
SS
= V
HS
=
0V, RT = 100k
. No Load on LO or HO.
Specifications in standard typeface are for T
J
= +25C, and those in
boldface
Symbol
SUPPLY CURRENTS
I
DD
I
DDO
I
HB
I
HBO
I
HBS
I
HBSO
INPUT PINS
V
IL
V
IH
R
I
TIME DELAY CONTROLS
V
RT
I
RT
T
D1
T
D2
UNDER VOLTAGE PROTECTION
V
DDR
V
DD
Rising Threshold
V
DDH
V
DD
Threshold Hysteresis
V
HBR
HB Rising Threshold
V
HBH
HB Threshold Hysteresis
BOOT STRAP DIODE
V
DL
Low-Current Forward Voltage
V
DH
High-Current Forward Voltage
R
D
Dynamic Resistance
LO GATE DRIVER
V
OLL
Low-Level Output Voltage
V
OHL
High-Level Output Voltage
Parameter
Conditions
Min
Typ
Max
Units
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V
SS
Current, Quiescent
HB to V
SS
Current, Operating
LI = HI = 0V
f = 500 kHz
LI = HI = 0V
f = 500 kHz
V
HS
= V
HB
= 100V
f = 500 kHz
0.4
1.9
0.06
1.3
0.05
0.08
0.6
3
0.2
3
10
mA
mA
mA
mA
μA
mA
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Pulldown Resistance
0.8
1.8
1.8
200
V
V
k
2.2
500
100
Nominal Voltage at RT
RT Pin Current Limit
Delay Timer, RT = 10 k
Delay Timer, RT = 100 k
2.7
0.75
58
140
3
3.3
2.25
130
270
V
RT = 0V
1.5
90
200
mA
ns
ns
6.0
6.9
0.5
6.6
0.4
7.4
V
V
V
V
5.7
7.1
I
VDD-HB
= 100 μA
I
VDD-HB
= 100 mA
I
VDD-HB
= 100 mA
0.60
0.85
0.8
0.9
1.1
1.5
V
V
I
LO
= 100 mA
I
LO
= –100 mA
V
OHL
= V
DD
– V
LO
V
LO
= 0V
V
LO
= 12V
0.25
0.4
V
0.35
0.55
V
I
OHL
I
OLL
HO GATE DRIVER
V
OLH
Peak Pullup Current
Peak Pulldown Current
1.6
1.8
A
A
Low-Level Output Voltage
I
HO
= 100 mA
0.25
0.4
V
L
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PDF描述
LM5104SD High Voltage Half-Bridge Gate Driver with Adaptive Delay
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LM5105SD 100V Half Bridge Gate Driver with Programmable Dead-time
LM5105SDX 100V Half Bridge Gate Driver with Programmable Dead-time
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LM5104MX/NOPB 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5104SD 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5104SD/NOPB 功能描述:功率驅(qū)動(dòng)器IC High Vltg Half- Bridge Gate Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5104SD/NOPB 制造商:Texas Instruments 功能描述:MOSFET Driver
LM5104SDX 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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