參數(shù)資料
型號(hào): LM5104MX
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類(lèi): 外設(shè)及接口
英文描述: High Voltage Half-Bridge Gate Driver with Adaptive Delay
中文描述: 1.8 A HALF BRIDGE BASED PRPHL DRVR, PDSO8
封裝: MS-012AA, SOIC-8
文件頁(yè)數(shù): 10/12頁(yè)
文件大?。?/td> 375K
代理商: LM5104MX
Startup and UVLO
(Continued)
Diode Power Dissipation V
IN
= 40V
20089008
The total IC power dissipation can be estimated from the
above plots by summing the gate drive losses with the
bootstrap diode losses for the intended application. Because
the diode losses can be significant, an external diode placed
in parallel with the internal bootstrap diode (refer to
Figure 4
)
can be helpful in removing power from the IC. For this to be
effective, the external diode must be placed close to the IC to
minimize series inductance and have a significantly lower
forward voltage drop than the internal diode.
20089009
FIGURE 4. LM5104 Driving MOSFETs Connected in Synchronous Buck Configuration
L
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LM5104MX/NOPB 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5104SD 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5104SD/NOPB 功能描述:功率驅(qū)動(dòng)器IC High Vltg Half- Bridge Gate Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5104SD/NOPB 制造商:Texas Instruments 功能描述:MOSFET Driver
LM5104SDX 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube