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| 型號(hào)： | LM4040CIZ-8.2 |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | CAP 1000PF 100V 5% NP0(C0G) RAD.10 .15X.15 BULK TRIMMED-LEAD |
| 中文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 8.192 V, PBCY3 |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 19/39頁(yè) |
| 文件大?。?/td> | 482K |
| 代理商： | LM4040CIZ-8.2 |
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LM4040x50I Electrical Characteristics
at industrial temperature range, full-range T
A
= –40
°
C to 85
°
C (unless otherwise noted)
V
Z
I
Z
LM4040
PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE
SLOS456I–JANUARY 2005–REVISED DECEMBER 2005
LM4040A50I
MIN
LM4040B50I
MIN
PARAMETER
TEST CONDITIONS
T
A
UNIT
TYP
MAX
TYP
MAX
V
Z
Reverse breakdown voltage
I
Z
= 100
μ
A
25
°
C
25
°
C
5
5
V
–5
5
–10
–43
10
43
89
95
Reverse breakdown voltage
tolerance
V
Z
I
Z
= 100
μ
A
mV
Full range
25
°
C
Full range
25
°
C
25
°
C
Full range
25
°
C
25
°
C
Full range
25
°
C
Full range
–38
38
89
95
65
65
I
Z,min
Minimum cathode current
μ
A
I
Z
= 10 mA
±
30
±
20
±
30
±
20
Average temperature coefficient
of reverse breakdown voltage
α
VZ
I
Z
= 1 mA
ppm/
°
C
±
100
±
100
I
Z
= 100
μ
A
±
20
0.5
±
20
0.5
1
1
I
Z,min
< I
Z
< 1 mA
Reverse breakdown voltage
change with cathode current
change
1.4
1.4
mV
3.5
8
3.5
8
1 mA < I
Z
< 15 mA
12
12
I
Z
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
Z
I
= 100
μ
A,
10 Hz
≤
f
≤
10 kHz
t = 1000 h,
T
A
= 25
°
C
±
0.1
°
C,
I
Z
= 100
μ
A
T
A
= –40
°
C to 125
°
C
Z
Z
Reverse dynamic impedance
25
°
C
0.5
1.1
0.5
1.1
e
N
Wideband noise
25
°
C
80
80
μ
V
RMS
Long-term stability of reverse
breakdown voltage
120
120
ppm
V
HYST
Thermal hysteresis
(1)
0.08
0.08
%
(1)
Thermal hysteresis is defined as V
Z,25
°
C
(after cycling to –40
°
C) – V
Z,25
°
C
(after cycling to 125
°
C).
19
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