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參數(shù)資料
| 型號： | LM4040CIZ-8.2 |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | CAP 1000PF 100V 5% NP0(C0G) RAD.10 .15X.15 BULK TRIMMED-LEAD |
| 中文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 8.192 V, PBCY3 |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁數(shù)： | 13/39頁 |
| 文件大?。?/td> | 482K |
| 代理商： | LM4040CIZ-8.2 |
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LM4040x25Q Electrical Characteristics
at extended temperature range, full-range T
A
= –40
°
C to 125
°
C (unless otherwise noted)
V
Z
I
Z
LM4040
PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE
SLOS456I–JANUARY 2005–REVISED DECEMBER 2005
LM4040C25Q
MIN
LM4040D25Q
MIN
PARAMETER
TEST CONDITIONS
T
A
UNIT
TYP
2.5
MAX
TYP
2.5
MAX
V
Z
Reverse breakdown voltage
I
Z
= 100
μ
A
25
°
C
25
°
C
V
–12
–38
12
38
75
80
–25
–63
25
63
75
80
Reverse breakdown voltage
tolerance
V
Z
I
Z
= 100
μ
A
mV
Full range
25
°
C
Full range
25
°
C
25
°
C
Full range
25
°
C
25
°
C
Full range
25
°
C
Full range
45
45
I
Z,min
Minimum cathode current
μ
A
I
Z
= 10 mA
±
20
±
15
±
20
±
15
Average temperature coefficient
of reverse breakdown voltage
α
VZ
I
Z
= 1 mA
ppm/
°
C
±
100
±
150
I
Z
= 100
μ
A
±
15
0.3
±
15
0.3
0.8
1
I
Z,min
< I
Z
< 1 mA
Reverse breakdown voltage
change with cathode current
change
1
6
8
1.2
mV
2.5
2.5
8
1 mA < I
Z
< 15 mA
10
I
Z
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
Z
I
= 100
μ
A,
10 Hz
≤
f
≤
10 kHz
t = 1000 h,
T
A
= 25
°
C
±
0.1
°
C,
I
Z
= 100
μ
A
T
A
= –40
°
C to 125
°
C
Z
Z
Reverse dynamic impedance
25
°
C
0.3
0.9
0.3
1.1
e
N
Wideband noise
25
°
C
35
35
μ
V
RMS
Long-term stability of reverse
breakdown voltage
120
120
ppm
V
HYST
Thermal hysteresis
(1)
0.08
0.08
%
(1)
Thermal hysteresis is defined as V
Z,25
°
C
(after cycling to –40
°
C) – V
Z,25
°
C
(after cycling to 125
°
C).
13
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PDF描述 |
|---|---|
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相關代理商/技術參數(shù) |
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|---|---|
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