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參數(shù)資料
| 型號： | LM3207 |
| 廠商： | National Semiconductor Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO |
| 中文描述： | 六百五十零毫安微型，可調(diào)，降壓型DC -射頻功率放大器DC轉(zhuǎn)換器集成Vref的穩(wěn)壓器 |
| 文件頁數(shù)： | 18/19頁 |
| 文件大小： | 1335K |
| 代理商： | LM3207 |
Application Information
(Continued)
BOARD LAYOUT FLOW
1.
Minimize C1, PV
, and PGND loop. These traces
should be as wide and short as possible. This is most
important.
2.
Minimize L1, C2, SW and PGND loop. These traces also
should be wide and short. This is the second priority.
3.
Above layout patterns should be placed on the compo-
nent side of the PCB to minimize parasitic inductance
and resistance due to via-holes. It may be a good idea
that the SW to L1 path is routed between C2(+) and
C2(-) land patterns. If vias are used in these large cur-
rent paths, multiple via-holes should be used if possible.
4.
Connect C1(-), C2(-) and PGND with wide GND pattern.
This pattern should be short, so C1(-), C2(-), and PGND
should be as close as possible. Then connect to a PCB
common GND pattern with as many via-holes as pos-
sible.
5.
SGND should not connect directly to PGND. Connecting
these pins under the device should be avoided. (If pos-
sible, connect SGND to the common port of C1(-), C2(-)
and PGND.)
FB line should be protected from noise. It is a good idea
to use an inner GND layer (if available) as a shield.
The LDO Cap C7 (C
LDO
) should be placed as close to
the PA as possible and as far away from the switcher to
suppress high frequency switch noises.
Note:
The evaluation board shown in
Figure 5
for the LM3207 was designed
with these considerations, and it shows good performance. However
some aspects have not been optimized because of limitations due to
evaluation-specific requirements. Please refer questions to a National
representative.
6.
7.
20165357
FIGURE 5. Evaluation Board Layout
L
www.national.com
18
相關(guān)PDF資料 |
PDF描述 |
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| LM3207TL | 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO |
| LM3207TLX | 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO |
| LM3208 | 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers |
| LM3208TL | 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers |
| LM3208TLX | 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM3207_07 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO |
| LM3207TL | 制造商:Texas Instruments 功能描述:LDO DC/DC CONVERTER POWERWISE 3207 |
| LM3207TL/NOPB | 功能描述:DC/DC 開關(guān)控制器 RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| LM3207TL-2.53 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO |
| LM3207TL-2.53/NOPB | 功能描述:DC/DC 開關(guān)控制器 RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
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