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參數(shù)資料
| 型號： | LH5PV16256 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 4M (256K x 16) Pseudo-Static RAM |
| 中文描述： | 的CMOS 4分（256K × 16），偽靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 116K |
| 代理商： | LH5PV16256 |
AC ELECTRICAL CHARACTERISTICS
1,2,7
(T
A
= 0 to +70
°
C, V
CC
= 3.0 V
±
0.15 V)
PARAMETER
SYMBOL
t
RC
t
RMW
t
CE
t
P
t
AS
t
RAH
t
CAH
t
CSS
t
CSH
t
RCS
t
RCH
t
CEA
t
OEA
t
CLZ
t
OLZ
t
WLZ
t
CHZ
t
OHZ
t
WHZ
t
WCP
t
WCS
t
WCH
t
DSW
t
DSC
t
DHW
t
DHC
t
OH
t
AHC
t
AHW
t
T
t
ODS
t
ODH
t
REF
t
FC
t
RFD
t
FAP
t
FP
MIN.
190
250
120
60
0
30
120
0
30
0
0
20
0
0
0
0
0
35
35
120
30
30
0
30
0
20
0
3
0
15
190
90
80
40
MAX.
10,000
120
60
30
30
30
10,000
10,000
50
32
1,000
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
NOTES
3
3
11
9
4
4
11
9, 13
13
10, 13
12, 13
5, 12, 13
5
5, 11, 13
5
5
5, 13
6
6
8
Random read, write cycle time
Random modify write cycle time
CE pulse width
CE precharge time
Address setup time
Row address hold time from CE
Column address hold time from CE
CS setup time from CE
CS hold time from CE
Read command setup time
Read command hold time
CE access time
OE access time
CE to output in Low-Z
OE to output in Low-Z
Write disable to output in Low-Z
Chip disable to output in High-Z
Output disable to output in High-Z
WE to output in High-Z
Write command pulse width
Write command setup time
Write command hold time
Data setup time from write disable
Data setup time from chip disable
Data hold time from write disable
Data hold time from chip disable
Data hold time from column address
Column address hold time from chip disable
Column address hold time from write disable
Transition time (rise and fall)
Output disable setup time
Output disable hold time
Refresh time interval (2048 cycle)
Auto refresh cycle time
Refresh delay time from CE
Refresh pulse width (Auto refresh)
Refresh precharge time (Auto refresh)
CE delay time from refresh enable
(Auto refresh)
Refresh pulse width (Self refresh)
CE delay time from refresh precharge
(Self refresh)
V
CC
recovery time from data retention
Refresh setup hold time
Refresh disable hold time
Chip disable delay time from RFSH
t
FCE
190
ns
t
FAS
8,000
ns
8
t
FRS
600
ns
t
R
t
FS
t
RDH
t
RDD
5
0
15
15
ms
ns
ns
ns
CMOS 4M (256
×
16) Pseudo-Static RAM
LH5PV16256
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5PV16256S12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Pseudo-Static RAM |
| LH5PV16256S-12LL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Pseudo-Static RAM |
| LH5PV8512 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 4M (512K x 8) Pseudo-Static RAM |
| LH5PV8512N-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH-5S-1 | 制造商:Shinagawa Shoko 功能描述: |
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