參數(shù)資料
型號: LH5164AZ8
廠商: Sharp Corporation
英文描述: CMOS 64K (8K x 8) Static RAM
中文描述: 的CMOS 64K的(8K的× 8)靜態(tài)RAM
文件頁數(shù): 6/9頁
文件大?。?/td> 66K
代理商: LH5164AZ8
DATA VALID
t
DH
t
DW
WE
D
IN
t
CW
OE
t
WC
5164AZ8-4
t
WR
t
CW
t
AW
CE
1
CE
2
t
AS
t
OHZ
t
WP
(NOTE 2)
t
WR
(NOTE 3)
D
OUT
(NOTE 5)
(NOTE 1)
t
WR
1. The writing occurs during an overlapping period of CE
1
= "LOW," CE
2
= "HIGH," and WE = "LOW" (t
WP
).
2. t
CW
is defined as the time from the last occuring transit, either CE
1
LOW transit or CE
2
HIGH transit,
to the time when the writing is finished.
3. t
AS
is defined as the time from address change to writing start.
4. t
WR
is defined as the time from writing finish to address change.
5. The input signals of opposite phase to the outputs must not be applied while I/O pins are in the output state.
NOTES:
(NOTE 4)
ADDRESS
Figure 4. Write Cycle
LH5164AZ8
CMOS 64K (8K
×
8) Static RAM
6
相關PDF資料
PDF描述
LH5164ASH 834219037
LH5164AV CMOS 64K (8K x 8) Static RAM
LH5164AVH CMOS 64K (8K x 8) Static RAM
LH5164A CMOS 64K (8K x 8) Static RAM
LH5164AH CMOS 64K (8K x 8) Static RAM
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