參數(shù)資料
型號(hào): LH5164AZ8
廠商: Sharp Corporation
英文描述: CMOS 64K (8K x 8) Static RAM
中文描述: 的CMOS 64K的(8K的× 8)靜態(tài)RAM
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 66K
代理商: LH5164AZ8
DATA RETENTION CHARACTERISTICS (T
A
= -30 to +60
°
C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
MAX.
UNIT
NOTE
Data retention supply voltage
V
CCDR
CE
2
0.2 V or
CE
1
V
CCDR
– 0.2 V
V
CCDR
= 3.0 V,
CE
2
0.2 V or
CE
1
V
CCDR
– 0.2 V
2.0
5.5
V
1
Data retention supply current
I
CCDR
T
A
= 25
°
C
T
A
= 60
°
C
0.2
μ
A
0.6
1
Chip disable to data retention
Recovery time
t
CDR
t
R
0
ns
ns
t
RC
2
NOTES:
1.
CE
2
should be
V
CCDR
- 0.2 V or
0.2 V.
2.
t
RC
= Read cycle time
t
LZ1
t
ACE1
t
OHZ
D
OUT
DATA VALID
OE
t
RC
5164AZ8-3
t
OLZ
NOTE:
WE is "HIGH" level during the read cycle.
t
ACE2
t
AA
t
LZ2
CE
1
CE
2
t
HZ1
t
OE
t
OH
t
HZ2
ADDRESS
Figure 3. Read Cycle
CMOS 64K (8K
×
8) Static RAM
LH5164AZ8
5
相關(guān)PDF資料
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