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參數(shù)資料
| 型號： | LH28F800BVE-BTL90 |
| 廠商： | Sharp Corporation |
| 英文描述： | 8M Flash Memory |
| 中文描述： | 分快閃記憶體 |
| 文件頁數(shù)： | 9/38頁 |
| 文件大?。?/td> | 328K |
| 代理商： | LH28F800BVE-BTL90 |
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8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
9
BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS
Bus Operations for Word-Wide Mode (BY
TE
= V
IH
)
MODE
RP
CE
1
CE
0
OE
WE
A
1
DQ
0
- DQ
15
RY
/BY
NOTE
Read
V
IH
V
IL
V
IL
V
IL
V
IH
X
D
OUT
X
1, 2, 7
Output Disable
V
IH
V
IL
V
IL
V
IH
V
IH
X
High-Z
X
1, 6, 7
Standby
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
V
IH
X
X
X
High-Z
X
1, 6, 7
Deep Power-Down
V
IL
X
X
X
X
X
High-Z
V
OH
1, 3
Manufacturer ID
V
IH
V
IL
V
IL
V
IL
V
IH
V
IL
00B0H
V
OH
4
Device ID
V
IH
V
IL
V
IL
V
IL
V
IH
V
IH
66A8H
V
OH
4
Write
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
X
1, 5, 6
NOTES:
1. X can be V
IH
or V
IL
for address or control pins except for RY
/BY
, which is either V
OL
or V
OH
.
2. RY
/BY
output is open drain. When the WSM is ready, Erase is suspended or the device is in deep power-down mode,
RY
/BY
will be at V
OH
if it is tied to V
CC
through a resistor. When the RY
/BY
at V
OH
is independent of OE
while a WSM
operation is in progress.
3. RP
at GND ± 0.2 V ensures the lowest deep power-down current.
4. A
0
and A
1
at V
IL
provide manufacturer ID codes in x8 and x16 modes respectively. A
0
and A
1
, at V
IH
provide device ID
codes in x8 and x16 modes respectively. All other addresses are set to zero.
5. Commands for different Erase operations, Data Write operations of Lock-Block operations can only be successfully
completed when V
PP
= V
PPH
.
6. While the WSM is running, RY
/BY
in Level-Mode (default) stays at V
OL
until all operations are complete. RY
/BY
goes to
V
OH
when the WSM is not busy or in erase suspend mode.
7. RY
/BY
may be at V
OL
while the WSM is busy performing various operations. For example, a status register read during a
write operations.
Bus Operations For Byte-Wide Mode (BY
TE
= V
IL
)
MODE
RP
CE
1
CE
0
OE
WE
A
0
DQ
0
- DQ
7
RY
/BY
NOTE
Read
V
IH
V
IL
V
IL
V
IL
V
IH
X
D
OUT
X
1, 2, 7
Output Disable
V
IH
V
IL
V
IL
V
IH
V
IH
X
High-Z
X
1, 6, 7
Standby
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
V
IH
X
X
X
High-Z
X
1, 6, 7
Deep Power-Down
V
IL
X
X
X
X
X
High-Z
V
OH
1, 3
Manufacturer ID
V
IH
V
IL
V
IL
V
IL
V
IH
V
IL
B0H
V
OH
4
Device ID
V
IH
V
IL
V
IL
V
IL
V
IH
V
IH
A8H
V
OH
4
Write
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
X
1, 5, 6
相關PDF資料 |
PDF描述 |
|---|---|
| LH28F800BVE-TTL90 | 8M Flash Memory |
| LH28F800SU | 8M (512K 】 16, 1M 】 8) Flash Memory |
| LH28F800BGEBL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGETL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGETL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800BVE-TTL90 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8M Flash Memory |
| LH28F800BVE-TV85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| LH28F800BVHE-BTL90 | 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP |
| LH28F800BVHE-BV85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| LH28F800BVHE-TTL90 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 8M (1M x 8/512K x 160 |
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