參數資料
型號: LH28F800BVE-BTL90
廠商: Sharp Corporation
英文描述: 8M Flash Memory
中文描述: 分快閃記憶體
文件頁數: 11/38頁
文件大?。?/td> 328K
代理商: LH28F800BVE-BTL90
8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
11
LH28F800SU Performance Enhancement Command Bus Definitions
COMMAND
MODE
FIRST BUS CYCLE
SECOND BUS CYCLE
THIRD BUS CYCLE
NOTE
OPER.
ADDR.
DATA
OPER.
ADDR.
DATA
OPER.
ADDR.
DATA
Read Extended
Status Register
Write
X
71H
Read
RA
GSRD
BSRD
1
Page Buffer Swap
Write
X
72H
7
Read Page Buffer
Write
X
75H
Read
PA
PD
Single Load to
Page Buffer
Write
X
74H
Write
PA
PD
Sequential Load to
Page Buffer
x8
Write
X
E0H
Write
X
BCL
Write
X
BCH
4, 6, 10
x16
Write
X
E0H
Write
X
WCL
Write
X
WCH
4, 5,
6, 10
Page Buffer Write
to Flash
x8
Write
X
0CH
Write
A0
BC
(L, H)
Write
WA
BC (H, L)
3, 4,
9, 10
x16
Write
X
0CH
Write
X
WCL
Write
WA
WCH
4, 5, 10
Two-Byte Write
x8
Write
X
FBH
Write
A0
WD
(L, H)
Write
WA
WD (H, L)
3
Block
Erase/Confirm
Write
X
20H
Write
BA
D0H
Lock Block/Confirm
Write
X
77H
Write
BA
D0H
Upload Status
Bits/Confirm
Write
X
97H
Write
X
D0H
2
Upload Device
Information
Write
X
99H
Write
X
D0H
Erase All Unlocked
Blocks/Confirm
Write
X
A7H
Write
X
D0H
RY
/BY
Enable to
Level-Mode
Write
X
96H
Write
X
01H
8
RY
/BY
Pulse-On-
Write
Write
X
96H
Write
X
02H
8
RY
/BY
Pulse-On-
Erase
Write
X
96H
Write
X
03H
8
RY
/BY
Disable
Write
X
96H
Write
X
04H
8
Sleep
Write
X
F0H
Abort
Write
X
80H
ADDRESS
BA = Block Address
PA = Page Buffer Address
RA = Extended Register Address
WA = Write Address
X = Don’t Care
DATA
AD = Array Data
PD = Page Buffer Data
BSRD = BSR Data
GSRD = GSR Data
WC (L, H) = Word Count (Low, High)
BC (L, H) = Byte Count (Low, High)
WD (L, H) = Write Data (Low, High)
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