參數(shù)資料
型號: LH28F800BVB-TTL90
廠商: Sharp Corporation
英文描述: Flash Memory 8M (1M 】 8/512K 】 16)
中文描述: 閃存800萬(100萬】8/512K】16)
文件頁數(shù): 5/38頁
文件大?。?/td> 328K
代理商: LH28F800BVB-TTL90
8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
5
PIN DESCRIPTION (Continued)
SYMBOL
TYPE
NAME AND FUNCTION
WP
INPUT
WRITE PROTECT:
Erase blocks can be locked by writing a non-volatile lock-bit for
each block. When WP is low, those locked blocks as reflected by the Block-Lock Status
bits (BSR.6), are protected from inadvertent Data Writes or Erases. When WP is high,
all blocks can be Written or Erased regardless of the state of the lock-bits. The WP
input buffer is disabled when RP
transitions low (deep power-down mode).
BYTE
INPUT
BYTE ENABLE:
BYTE low places device x8 mode. All data is then input or output
on DQ
0
- DQ
7
, and DQ
8
- DQ
15
float. Address A
0
selects between the high and low
byte. BYTE high places the device in x16 mode, and turns off the A
0
input buffer.
Address A
1
, then becomes the lowest order address.
3.3/5.0 VOLT SELECT:
3/5
high configures internal circuits for 3.3 V operation.
3/5
low configures internal circuits for 5.0 V operation.
NOTES:
Reading the array with 3/5
high in a 5.0 V system could damage the
device. There is a significant delay from 3/5
switching to valid data.
3/5
INPUT
V
PP
SUPPLY
ERASE/WRITE POWER SUPPLY (5.0 V ±0.5 V)
: For erasing memory array blocks or
writing words/bytes/pages into the flash array.
V
CC
SUPPLY
DEVICE POWER SUPPLY (3.3 V ±0.3 V, 5.0 V ±0.5 V) (2.7 ~ 3.6 at Read Operation)
:
Do not leave any power pins floating.
GND
SUPPLY
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NC
NO CONNECT:
No internal connection to die, lead may be driven or left floating.
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