參數(shù)資料
型號： LH28F800BJHG-PTTLZ2
英文描述： Flash ROM
中文描述： 閃存ROM
文件頁數(shù)： 36/56頁
文件大?。?/td> 373K
代理商： LH28F800BJHG-PTTLZ2
LH28F160S5-L/S5H-L
- 36 -
TEST CONFIGURATION
V
CC
= 5.0±0.25 V
(NOTE 1)
V
CC
= 5.0±0.5 V
NOTE :
1.
Applied to high-speed products, LH28F160S5-L70 and
LH28F160S5H-L70.
CL (pF)
30
100
Test Configuration Capacitance Loading Value
Fig. 12 Transient Input/Output Reference Waveform for V
CC
= 5.0±0.25 V
(High Speed Testing Configuration)
1.5
1.5
3.0
0.0
TEST POINTS
INPUT
OUTPUT
6.2.2 AC INPUT/OUTPUT TEST CONDITIONS
AC test inputs are driven at 3.0 V for a Logic "1" and 0.0 V for a Logic "0". Input timing begins, and output
timing ends, at 1.5 V. Input rise and fall times (10% to 90%) < 10 ns.
Fig. 13 Transient Input/Output Reference Waveform for V
CC
= 5.0±0.5 V
(Standard Testing Configuration)
2.0
0.8
2.0
0.8
2.4
0.45
TEST POINTS
INPUT
OUTPUT
AC test inputs are driven at V
OH
(2.4 V
TTL
) for a Logic "1" and V
OL
(0.45 V
TTL
) for a Logic "0". Input timing
begins at V
IH
(2.0 V
TTL
) and V
IL
(0.8 V
TTL
). Output timing ends at V
IH
and V
IL
. Input rise and fall times (10%
to 90%) < 10 ns.
Fig. 14 Transient Equivalent Testing
Load Circuit
DEVICE
UNDER
TEST
C
L
Includes Jig
Capacitance
R
L
= 3.3 k
C
L
OUT
1.3 V
1N914
相關(guān)PDF資料
PDF描述
LH28F800BVE-TV85 x8/x16 Flash EEPROM
LH28F800SGN-L10 x16 Flash EEPROM
LH28F800SGN-L100 x16 Flash EEPROM
LH28F800SGN-L70 x16 Flash EEPROM
LH28F800SGR-L10 x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F800BVB-TTL90 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 8M (1M 】 8/512K 】 16)
LH28F800BVE-BTL90 制造商:Sharp Microelectronics Corporation 功能描述:Flash Mem Parallel 3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
LH28F800BVE-TTL90 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8M Flash Memory
LH28F800BVE-TV85 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
LH28F800BVHE-BTL90 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP
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