參數(shù)資料
型號(hào)： LH28F640SPHT-PTL12
廠商： Sharp Corporation
英文描述： 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory
中文描述： 64兆比特（4Mbitx16/8Mbitx8）頁(yè)閃存
文件頁(yè)數(shù)： 17/45頁(yè)
文件大?。?/td> 1041K
代理商： LH28F640SPHT-PTL12
LHF64P01 15
Rev. 0.06
NOTE:
1. When the device is configured in one of the pulse modes, the STS pin pulses low with a typical pulse width of 250ns.
Table 9. STS Configuration Definition
(1)
R
15
R
7
R
14
R
6
R
13
R
5
R
12
R
4
R
11
R
3
R
10
R
2
R
9
CC
1
R
8
CC
0
DQ
15
-DQ
2
= RESERVED FOR FUTURE
ENHANCEMENTS (R)
DQ
1
-DQ
0
= STS CONFIGURATION CODE (CC)
00 = level mode: RY/BY# indication. (Default)
01 = pulse mode on erase complete.
10 = pulse mode on program complete.
11 = pulse mode on erase or program complete.
In STS configuration = "00", STS is V
OL
when the WSM is
executing internal erase or program algorithms.
STS configuration codes "01", "10" and "11" are all pulse
modes such that the STS pin pulses low then high when the
operation indicated by the configuration code is completed.
NOTES:
After power-up or device reset, STS configuration is set to
"00".
STS configuration 00
The output of the STS pin is the control signal to prevent
accessing a flash memory while the internal WSM is busy
(SR.7="0").
STS configuration 01
The output of the STS pin is the control signal to indicate
that the erase operation is completed and the flash memory
is available for the next operation.
STS configuration 10
The output of the STS pin is the control signal to indicate
that the program operation is completed and the flash
memory is available for the next operation.
STS configuration 11
The output of the STS pin is the control signal to indicate
that the erase or program operation is completed and the
flash memory is available for the next operation.
相關(guān)PDF資料
PDF描述
LH28F800BVE-BV85 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術(shù)閃速存儲(chǔ)器)
LH28F800BVE-TV85 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術(shù)閃速存儲(chǔ)器)
LH28F800BVHE-BTL90 8M (1M x 8/512K x 16)Smart3 Flash Memory(8M (1M x 8/512K x 16)Smart3技術(shù)閃速存儲(chǔ)器)
LH28F800BVHE-TTL90 8M (1M x 8/512K x 16)Smart3 Flash Memory(8M (1M x 8/512K x 16)Smart3技術(shù)閃速存儲(chǔ)器)
LH28F800SG-L10 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F640SPHT-PTLZ8 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
LH28F800 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BG 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memory
LH28F800BGBBL12 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
LH28F800BGB-BL12 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*