參數(shù)資料
型號： LH28F160S3HT-L13
英文描述： EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
中文描述： 的EEPROM | FLASH動(dòng)畫| 1MX16/2MX8 |的CMOS | TSSOP封裝| 56PIN |塑料
文件頁數(shù)： 50/56頁
文件大?。?/td> 373K
代理商： LH28F160S3HT-L13
LH28F160S5-L/S5H-L
- 50 -
V
CC
= 5.0±0.25 V, 5.0±0.5 V, T
A
= 0 to +70°C or
–40 to +85°C
6.2.8 BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE AND
BLOCK LOCK-BIT CONFIGURATION PERFORMANCE
(NOTE 3, 4)
NOTES :
1.
Typical values measured at T
A
= +25°C and nominal
voltages. Assumes corresponding block lock-bits are not
set. Subject to change based on device characterization.
2.
Excludes system-level overhead.
3.
These performance numbers are valid for all speed
versions.
Sampled, not 100% tested.
4.
SYMBOL
PARAMETER
NOTE
V
CC
= 5.0±0.5 V
TYP.
(NOTE 1)
UNIT
MIN.
MAX.
t
WHQV1
t
EHQV1
t
WHQV1
t
EHQV1
Word/Byte Write Time (using W/B write, in word mode)
2
9.24
TBD
μs
Word/Byte Write Time (using W/B write, in byte mode)
2
9.24
TBD
μs
Word/Byte Write Time (using multi word/byte write)
Block Write Time (using W/B write, in word mode)
Block Write Time (using W/B write, in byte mode)
Block Write Time (using multi word/byte write)
2
2
2
2
2
TBD
3.7
7.5
1.5
μs
s
s
s
0.31
0.61
0.13
t
WHQV2
t
EHQV2
Block Erase Time
2
0.34
10
s
Full Chip Erase Time
10.9
TBD
s
t
WHQV3
t
EHQV3
t
WHQV4
t
EHQV4
t
WHRH1
t
EHRH1
t
WHRH2
t
EHRH2
Set Block Lock-Bit Time
2
9.24
TBD
μs
Clear Block Lock-Bits Time
2
0.34
TBD
s
Write Suspend Latency Time to Read
5.6
7
μs
Erase Suspend Latency Time to Read
9.4
13.1
μs
相關(guān)PDF資料
PDF描述
LH28F160S3NS-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC
LH28F160S3R-L10 x8/x16 Flash EEPROM
LH28F160S3R-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
LH28F320BFHE-PBTL70 Flash ROM
LH28F320BFHE-PBTLZA Flash ROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F160S3HT-L75A 制造商:Sharp Microelectronics Corporation 功能描述:
LH28F160S3HT-TF 功能描述:IC FLASH 16MBIT 100NS 56TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
LH28F160S3-L10 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3-L13 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3NS-L10 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
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