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參數(shù)資料
| 型號(hào)： | LH28F016SUT |
| 廠商： | Sharp Corporation |
| 英文描述： | 16M (1M x 16 , 2M x 8) Flash Memory |
| 中文描述： | 1,600（100萬× 16，200萬× 8）閃存 |
| 文件頁數(shù)： | 33/37頁 |
| 文件大?。?/td> | 326K |
| 代理商： | LH28F016SUT |
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16M (1M × 16, 2M × 8) Flash Memory
LH28F016SU
33
Figure 16. Alternate AC Waveforms for Command Write Operations
ADDRESSES (A)
(NOTE 1)
V
IH
V
IL
A
IN
A = RA
V
IH
V
IL
A
IN
D
IN
D
IN
D
IN
D
IN
D
OUT
CE
X
(E)
(NOTE 4)
V
IH
V
IL
OE (G)
V
IH
V
IL
WE (W)
V
IH
V
IL
DATA (D/Q)V
IH
V
IL
RY/BY (R)V
OH
V
OL
RP (P)
V
IH
V
IL
t
AVAV
t
AVAV
t
EHGL
t
EHEL
t
ELEH
t
DVEH
t
PHEL
t
RHPL
t
QVVL
ADDRESSES (A)
(NOTE 2)
t
AVEH
t
EHAX
t
AVEH
t
EHAX
t
WLEL
t
EHWH
t
EHQV 1, 2
t
GHEL
t
EHDX
t
EHRL
(NOTE 5)
t
VPEH
28F016SUT-14
(NOTE 3)
HIGH-Z
WRITE
DATA-WRITE
OR ERASE
SETUP COMMAND
DEEP
POWER-DOWN
WRITE VALID
ADDRESS AND DATA
(DATA-WRITE) OR
ERASE CONFIRM
COMMAND
AUTOMATED
DATA-WRITE
OR ERASE
DELAY
WRITE READ
EXTENDED
REGISTER
COMMAND
NOTES:
1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD.
2. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.
4. CE
X
is defined as the latter of CE
0
or CE
1
going LOW or the first of CE
0
or CE
1
going HIGH.
5. RP low transition is only to show t
RHPL
; not valid for above Read and Write cycles.
V
PP
(V)V
PPH
V
PPL
READ
EXTENDED
STATUS
REGISTER DATA
READ
COMPATIBLE
STATUS
REGISTER DATA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F016SUT-10 | 16M (1M x 16 , 2M x 8) Flash Memory |
| LH28F016SUT-70 | 16M (1M x 16 , 2M x 8) Flash Memory |
| LH28F016SCT-L95 | 16M Flash Memory 2M (】8) |
| LH28F016LL | 16M (1M 】 16, 2M 】 8) Flash Memory |
| LH28F016SA | 16M (1M 】 16, 2M 】 8) Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F016SUT-10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16M (1M x 16 , 2M x 8) Flash Memory |
| LH28F016SUT-70 | 制造商:Sharp Microelectronics Corporation 功能描述: |
| LH28F020SU-L | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:2M (256K 】 8) Flash Memory |
| LH28F020SU-N | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:2M (256K 】 8) Flash Memory |
| LH28F020SUN-L12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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