參數(shù)資料
型號: LH28F016SCT-Z4
英文描述: EEPROM|FLASH|2MX8|CMOS|TSSOP|40PIN|PLASTIC
中文描述: 的EEPROM | FLASH動畫| 2MX8 |的CMOS | TSSOP封裝| 40PIN |塑料
文件頁數(shù): 16/56頁
文件大小: 373K
代理商: LH28F016SCT-Z4
LH28F160S5-L/S5H-L
4.5.4 DEVICE GEOMETRY DEFINITION
This field provides critical details of the flash device geometry.
Table 9 Device Geometry Definition
OFFSET
LENGTH
DESCRIPTION
(Word Address)
27H
01H
Device Size
15H (15H = 21, 2
21
= 2 097 152 = 2 M Bytes)
Flash Device Interface Description
02H, 00H (x8/x16 supports x8 and x16 via BYTE#)
Maximum Number of Bytes in Multi Word/Byte Write
05H, 00H (2
5
= 32 Bytes )
Number of Erase Block Regions within Device
01H (symmetrically blocked)
The Number of Erase Blocks
1FH, 00H (1FH = 31
31 + 1 = 32 Blocks)
The Number of "256 Bytes" cluster in a Erase Block
00H, 01H (0100H = 256
256 Bytes x 256 = 64k Bytes in a Erase Block)
28H, 29H
02H
2AH, 2BH
02H
2CH
01H
2DH, 2EH
02H
2FH, 30H
02H
- 16 -
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F016SCT-ZR 制造商:Sharp Microelectronics 功能描述:FLASH MEMORY 16MBIT (2MBITX8)
LH28F016SU 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16M (1M 】 16, 2M 】 8) Flash Memory
LH28F016SUHT 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory
LH28F016SUHT-10 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory
LH28F016SUR-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM