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參數(shù)資料
| 型號： | LH28F016SCT-L95 |
| 廠商： | Sharp Corporation |
| 英文描述： | 16M Flash Memory 2M (】8) |
| 中文描述： | 1,600閃存200萬（】8） |
| 文件頁數(shù)： | 34/37頁 |
| 文件大?。?/td> | 326K |
| 代理商： | LH28F016SCT-L95 |
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LH28F016SU
16M (1M × 16, 2M × 8) Flash Memory
34
AC Characteristics for Page Buffer Write Operations
1
T
A
= 0°C to +70°C
NOTES:
CE
is defined as the latter of CE
0
or CE
1
going Low or the first of CE
0
or CE
1
going High.
1. These are WE
controlled write timings, equivalent CE
controlled write timings apply.
2. Sampled, but not 100% tested.
3. Address must be valid during the entire WE
Low pulse.
SYMBOL
PARAMETER
V
CC
= 3.3 V ± 0.3 V
UNITS
NOTE
TYP.
MIN.
MAX.
t
AVAV
Write Cycle Time
120
ns
t
ELWL
CE
Setup to WE Going Low
10
ns
t
AVWL
Address Setup to WE Going Low
0
ns
3
t
DVWH
Data Setup to WE Going High
75
ns
2
t
WLWH
WE Pulse Width
75
ns
t
WHDX
Data Hold from WE High
10
ns
2
t
WHAX
Address Hold from WE High
10
ns
2
t
WHEH
CE
Hold from WE High
10
ns
t
WHWL
WE Pulse Width High
45
ns
t
GHWL
Read Recovery before Write
0
ns
t
WHGL
Write Recovery before Read
95
ns
SYMBOL
PARAMETER
V
CC
= 5.0 V ± 0.25 V
V
CC
= 5.0 V ± 0.5 V
UNITS
NOTE
TYP.
MIN.
MAX.
TYP.
MIN.
MAX.
t
AVAV
Write Cycle Time
70
80
ns
t
ELWL
CE
Setup to WE Going Low
0
0
ns
t
AVWL
Address Setup to WE Going Low
0
0
ns
3
t
DVWH
Data Setup to WE Going High
50
50
ns
2
t
WLWH
WE Pulse Width
40
50
ns
t
WHDX
Data Hold from WE High
0
0
ns
2
t
WHAX
Address Hold from WE High
10
10
ns
2
t
WHEH
CE
Hold from WE High
10
10
ns
t
WHWL
WE Pulse Width High
30
30
ns
t
GHWL
Read Recovery before Write
0
0
ns
t
WHGL
Write Recovery before Read
60
65
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F016LL | 16M (1M 】 16, 2M 】 8) Flash Memory |
| LH28F016SA | 16M (1M 】 16, 2M 】 8) Flash Memory |
| LH28F016SANS | 16 Mbit(1 Mbit x 16, 2 Mbit x 8) |
| LH28F016SC-L | 16 M-bit (2 MB x 8) SmartVoltage Flash Memories |
| LH28F016SCH | 16-MBIT(2 MB x 8) SmartVoltage Flash MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F016SCT-Z4 | 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash, 2M x 8, 40 Pin, Plastic, TSSOP |
| LH28F016SCT-ZR | 制造商:Sharp Microelectronics 功能描述:FLASH MEMORY 16MBIT (2MBITX8) |
| LH28F016SU | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16M (1M 】 16, 2M 】 8) Flash Memory |
| LH28F016SUHT | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory |
| LH28F016SUHT-10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory |
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