- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369759 > LH28F016SCT-L120 EEPROM PDF資料下載
參數(shù)資料
| 型號： | LH28F016SCT-L120 |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 27/56頁 |
| 文件大小： | 373K |
| 代理商： | LH28F016SCT-L120 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當(dāng)前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
LH28F160S5-L/S5H-L
- 27 -
Start
Write E8H,
Start Address
Read
Status Register
0
XSR.7 =
1
Write Word or Byte Count (N)_1,
Start Address
Write Buffer Data,
Start Address
X = 0
Write Buffer Data,
Device Address
NOTES :
1. Byte or word count values on DQ
0-7
are loaded into the
count register.
2. Write buffer contents will be programmed at the start
address.
3. Align the start address on a write buffer boundary for
maximum programming performance.
4. The device aborts the Multi Word/Byte Write command
if the current address is outside of the original block address.
5. The status register indicates an "improper command
sequence" if the Multi Word/Byte Write command is aborted.
Follow this with a Clear Status Register command.
SR full status check can be done after each multi word/byte
write or after a sequence of multi word/byte writes.
Write FFH after the last multi word/byte write operation to
place device in read array mode.
BUS
OPERATION
Write
Read
Standby
Write
(NOTE 1)
COMMAND
Setup Multi
Word/Byte Write
COMMENTS
Data = E8H
Addr = Start Address
Data = Word or Byte Count (N)_1
Addr = Start Address
Write
(NOTE 2, 3)
Data = Buffer Data
Addr = Start Address
Write
(NOTE 4, 5)
Data = Buffer Data
Addr = Device Address
Write
Data = D0H
Addr = X
Read
Status Register Data
Standby
Extended Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Multi Word/Byte
Write Abort
Yes
No
No
X = N
No
Write Buffer
Time-Out
Yes
Full Status
Check if Desired
SR.7 =
Multi Word/Byte
Write Complete
0
1
X = X + 1
Write D0H
Read
Status Register
Yes
No
Yes
No
Suspend Multi Word/Byte
Write Loop
Suspend
Multi Word/Byte
Write
Write Another
Block Address
Check XSR.7
1 = Multi Word/Byte Write Ready
0 = Multi Word/Byte Write Busy
Yes
Abort
Buffer Write
Command
Another
Buffer
Write
Fig. 6 Automated Multi Word/Byte Write Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F016SCT-L150 | EEPROM |
| LH28F016SCT-L90 | x8 Flash EEPROM |
| LH28F016SCT-Z4 | EEPROM|FLASH|2MX8|CMOS|TSSOP|40PIN|PLASTIC |
| LH28F016SUR-10 | x8/x16 Flash EEPROM |
| LH28F016SUR-70 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F016SCT-L150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| LH28F016SCT-L90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F016SCT-L95 | 功能描述:IC FLASH 16MBIT 95NS 40TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| LH28F016SCT-Z4 | 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash, 2M x 8, 40 Pin, Plastic, TSSOP |
| LH28F016SCT-ZR | 制造商:Sharp Microelectronics 功能描述:FLASH MEMORY 16MBIT (2MBITX8) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。