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參數(shù)資料
| 型號： | LH28F004SU |
| 廠商： | Sharp Corporation |
| 英文描述： | 4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory |
| 中文描述： | 的4Mb（512Kbit × 8，256千位× 16）5V單電壓閃存 |
| 文件頁數(shù)： | 4/31頁 |
| 文件大小： | 249K |
| 代理商： | LH28F004SU |
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LH28F004SU-LC
4M (512K × 8) Flash Memory
4
INTRODUCTION
Sharp’s LH28F004SU-LC 4M Flash Memory is a
revolutionary architecture which enables the design of
truly mobile, high performance, personal computing and
communication products. With innovative capabilities.
3.3 V low power operation and very high read/write per-
formance, the LH28F004SU-LC is also the ideal choice
for designing embedded mass storage flash memory
systems.
The LH28F004SU-LC’s independently lockable 32
symmectrical blocked architecture (16K each) extended
cycling, low power operation, very fast write and read
performance and selective block locking provide a highly
flexible memory component suitable for cellular phone,
facsmilie, game, PC, printer and handy terminal. The
LH28F004SU-LC's 5.0 V/3.3 V power supply operation
enables the design of memory cards which can be read
in 3.3 V system and written in 5.0 V/3.3 V systems. Its
x8 architecture allows the optimization of memory to
processor interface. The flexible block locking option
enables bundling of executable application software in
a Resident Flash Array or memory card. Manufactured
on Sharp’s 0.55 μm ETOX process technology, the
LH28F004SU-LC is the most cost-effective, high-
density 3.3 V flash memory.
DESCRIPTION
The LH28F004SU-LC is a high performance 4M
(4,194,304 bit) block erasable non-volatile random
access memory organized as 512K × 8. The
LH28F004SU-LC includes thirty-two 16K (16,384)
blocks. A chip memory map is shown in Figure 3.
The implementation of a new architecture, with many
enhanced features, will improve the device operating
characteristics and results in greater product reliability
and ease of use.
Among the significant enhancements of the
LH28F004SU-LC:
3 V Read, 5 V Write/Erase Operation
(5 V V
PP
, 3 V V
CC
)
Low Power Capability (2.7 V V
CC
Read)
Improved Write Performance
Dedicated Block Write/Erase Protection
Command-Controlled Memory Protection
Set/Reset Capability
The LH28F004SU-LC will be available in a 40-pin,
1.2 mm thick × 10 mm × 20 mm TSOP (Type I) pack-
age. This form factor and pinout allow for very high board
layout densities.
A Command User Interface (CUI) serves as the
system Interface between the microprocessor or
microcontroller and the internal memory operation.
Internal Algorithm Automation allows Byte Writes and
Block Erase operations to be executed using a Two-
Write command sequence to the CUI in the same way
as the LH28F008SA 8M Flash memory.
A Superset of commands have been added to the
basic LH28F008SA command-set to achieve higher
write performance and provide additional capabilities.
These new commands and features include:
Software Locking of Memory Blocks
Memory Protection Set/Reset Capability
Two-Byte Serial Writes in 8-bit Systems
Erase All Unlocked Blocks
Writing of memory data is performed typically within
20 μs. A Block Erase operation erases one of the 32
blocks in typically 0.8 seconds, independent of the other
blocks.
LH28F004SU-LC allows to erase all unlocked blocks.
It is desirable in case you have to implement Erase
operation maximum 32 times.
LH28F004SU-LC enables Two-Byte serial Write
which is operated by three times command input. Writ-
ing of memory data is performed typically within 30 μs
per two-byte. This feature can improve system write per-
formance by up to typically 15 μs per byte.
All operations are started by a sequence of Write
commands to the device. Status Register (described in
detail later) and a RY
/BY
output pin provide informa-
tion on the progress of the requested operation.
Same as the LH28F008SA, LH28F004SU-LC
requires an operation to complete before the next
operation can be requested, also it allows to suspend
block erase to read data from any other block, and
allow to resume erase operation.
The LH28F004SU-LC provides user-selectable block
locking to protect code or data such as Device Drivers,
PCMCIA card information, ROM-Executable OS or
Application Code. Each block has an associated non-
volatile lock-bit which determines the lock status of the
block. In addition, the LH28F004SU-LC has a software
controlled master Write Protect circuit which prevents
any modifications to memory blocks whose lock-bits
are set.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F004SUT-NC80 | 4M (512K 】 8) Flash Memory |
| LH28F008SAR-85 | 8M (1M x8) Flash Memory(8M (1M x8) 閃速存儲器) |
| LH28F008SCR-L85 | 8M (1M x8) Flash Memory(8M (1M x8) 閃速存儲器) |
| LH28F008SCT-L12 | Flash Memory |
| LH28F008SA-12 | 8M (1M 】 8) Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F004SUB-Z9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SU-LC | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory |
| LH28F004SU-NC | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory |
| LH28F004SUT-LC12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F004SUT-LC15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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