Supply Voltage (V
參數(shù)資料
型號: LFX200B-04FN256C
廠商: Lattice Semiconductor Corporation
文件頁數(shù): 38/119頁
文件大?。?/td> 0K
描述: IC FPGA 210KGATES 256FPBGA
標(biāo)準(zhǔn)包裝: 90
系列: ispXPGA®
邏輯元件/單元數(shù): 2704
RAM 位總計(jì): 113664
輸入/輸出數(shù): 160
門數(shù): 210000
電源電壓: 2.3 V ~ 3.6 V
安裝類型: 表面貼裝
工作溫度: 0°C ~ 85°C
封裝/外殼: 256-BGA
供應(yīng)商設(shè)備封裝: 256-FPBGA(17x17)
Lattice Semiconductor
ispXPGA Family Data Sheet
21
Absolute Maximum Ratings
1, 2, 3
1.8V
2.5V/3.3V
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . .-0.5 to 5.5V
PLL Supply Voltage (VCCP) . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . .-0.5 to 5.5V
Output Supply Voltage (VCCO) . . . . . . . . . . . . . . . -0.5 to 4.5V . . . . . . . . . .-0.5 to 4.5V
IEEE 1149.1 TAP Supply Voltage (VCCJ) . . . . . . . -0.5 to 4.5V . . . . . . . . . .-0.5 to 4.5V
Input Voltage Applied
4, 5 . . . . . . . . . . . . . . . . . . . . -0.5 to 5.5V . . . . . . . . . .-0.5 to 5.5V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . -65 to 150
C. . . . . . . . . -65 to 150C
Junction Temperature (TJ) with Power Applied . . -55 to 150C. . . . . . . . . -55 to 150C
1. Stress above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, following the programming specifications).
2. Compliance with the Lattice Thermal Management document is required.
3. All voltages referenced to GND.
4. Overshoot and undershoot of -2V to (VIH (MAX) + 2) volts not to exceed 6V is permitted for a duration of <20ns.
5. A maximum of 64 I/Os per device with VIN > 3.6V is allowed.
Recommended Operating Conditions
E
2CMOS Erase Reprogram Specifications
Hot Socketing Characteristics
1, 2, 3, 4
Symbol
Parameter
Min
Max
Units
VCC
Supply Voltage for 1.8V device
1
1.65
1.95
V
Supply Voltage for 2.5V device
2.3
2.7
V
Supply Voltage for 3.3V device
3.0
3.6
V
VCCP
Supply Voltage for PLL and sysHSI blocks, 1.8V devices
1
1.65
1.95
V
Supply Voltage for PLL and sysHSI blocks, 2.5V devices
2.3
2.7
V
Supply Voltage for PLL and sysHSI blocks, 3.3V devices
3.0
3.6
V
VCCJ
Supply Voltage for IEEE 1149.1 Test Access Port for LVCMOS 1.8V
1.65
1.95
V
Supply Voltage for IEEE 1149.1 Test Access Port for LVCMOS 2.5V
2.3
2.7
V
Supply Voltage for IEEE 1149.1 Test Access Port for LVCMOS 3.3V
3.0
3.6
V
TJ (COM)
Junction Temperature Commercial Operation
0
85
C
TJ (IND)
Junction Temperature Industrial Operation
-40
105
C
1. sysHSI specification is valid for VCC and VCCP = 1.7V to 1.9V.
Parameter
Min
Max
Units
Erase/Reprogram Cycle
1
1,000
Cycles
1. Valid over commercial temperature range.
Symbol
Parameter
Condition
Min
Typ
Max
Units
IDK
Input or Tristated I/O Leakage Current 0 VIN 3.0V
+/-50
+/-800
A
1. Insensitive to sequence of VCC and VCCO when VCCO 1.0V. For VCCO > 1.0V, VCC min must be present. However, assumes monotonic
rise/fall rates for VCC and VCCO, provided (VIN - VCCO) 3.6V.
2. LVTTL, LVCMOS only.
3. 0 < VCC VCC (MAX), 0 < VCCO VCCO (MAX).
4. IDK is additive to IPU, IPD or IBH. Device defaults to pull-up until non-volatile cells are active.
SELECT
DEVICES
DISCONTINUED
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