Figure 2-34. LatticeECP/EC Banks LatticeECP/EC devices contain two types of sysI/O buffer pai" />
參數(shù)資料
型號： LFECP10E-3FN484I
廠商： Lattice Semiconductor Corporation
文件頁數(shù)： 90/163頁
文件大?。?/td> 0K
描述： IC FPGA 10.2KLUTS 484FPBGA
標(biāo)準(zhǔn)包裝： 60
系列： ECP
邏輯元件/單元數(shù)： 10200
RAM 位總計(jì)： 282624
輸入/輸出數(shù)： 288
電源電壓： 1.14 V ~ 1.26 V
安裝類型： 表面貼裝
工作溫度： -40°C ~ 100°C
封裝/外殼： 484-BBGA
供應(yīng)商設(shè)備封裝： 484-FPBGA（23x23）
2-29
Architecture
LatticeECP/EC Family Data Sheet
Figure 2-34. LatticeECP/EC Banks
LatticeECP/EC devices contain two types of sysI/O buffer pairs.
1.
Top and Bottom sysI/O Buffer Pairs (Single-Ended Outputs Only)
The sysI/O buffer pairs in the top and bottom banks of the device consist of two single-ended output drivers
and two sets of single-ended input buffers (both ratioed and referenced). The referenced input buffer can also
be configured as a differential input.
The two pads in the pair are described as “true” and “comp”, where the true pad is associated with the positive
side of the differential input buffer and the comp (complementary) pad is associated with the negative side of
the differential input buffer.
Only the I/Os on the top and bottom banks have programmable PCI clamps. These I/O banks also support hot
socketing with IDK less than 1mA. Note that the PCI clamp is enabled after VCC, VCCAUX and VCCIO are at valid
operating levels and the device has been configured.
2.
Left and Right sysI/O Buffer Pairs (Differential and Single-Ended Outputs)
The sysI/O buffer pairs in the left and right banks of the device consist of two single-ended output drivers, two
sets of single-ended input buffers (both ratioed and referenced) and one differential output driver. The refer-
enced input buffer can also be configured as a differential input. In these banks the two pads in the pair are
described as “true” and “comp”, where the true pad is associated with the positive side of the differential I/O,
and the comp (complementary) pad is associated with the negative side of the differential I/O.
Only the left and right banks have LVDS differential output drivers. See the IDK specification for I/O leakage cur-
rent during power-up.
V
REF1(2)
GND
Bank
2
V
CCIO2
V
REF2(2)
V
REF1(3)
GND
Bank
3
V
CCIO3
V
REF2(3)
V
REF1(7)
GND
TOP
LEFT
RIGHT
BOTTOM
Bank
7
V
CCIO7
V
REF2(7)
V
REF1(6)
GND
Bank
6
V
CCIO6
V
REF2(6)
V
REF1(5)
GND
Bank 5
V
CCIO5
V
REF2(5)
V
REF1(4)
GND
Bank 4
V
CCIO4
V
REF2(4)
V
REF1(0)
GND
Bank 0
V
CCIO0
V
REF2(0)
V
REF1(1)
GND
Bank 1
V
CCIO1
V
REF2(1)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LFECP10E-3FN672C 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet
LFECP10E-3FN672I 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet
LFECP10E-3Q208C 功能描述:FPGA - 現(xiàn)場可編程門陣列 10.2K LUTs RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-256
LFECP10E-3Q208I 功能描述:FPGA - 現(xiàn)場可編程門陣列 10.2K LUTs 147 I/O RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-256
LFECP10E-3QN208C 功能描述:FPGA - 現(xiàn)場可編程門陣列 10.2K LUTs 147 IO DS P Blck 1.2V -3 Spd RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-256
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