參數(shù)資料
型號: LFE15600X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-448A, 3 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 72K
代理商: LFE15600X
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
List of components
(see Figs 3 and 4)
Notes
1.
2.
In thermal contact with TR1.
In thermal contact with DUT.
COMPONENT
DESCRIPTION
VALUE
TYPE NUMBERS
TR1
C1, C4
C2, C3
C5, C6
C7, C8
D1
D2
L1
L2
P1
R1
R2
R3
F1
transistor
DC blocking chip capacitor
trimmer capacitor
feedthrough bypass capacitor
tantalum capacitor
diode BY239 or equivalent; note 1
diode BY239 or equivalent; note 2
4 turns 0.5 mm copper wire; internal diameter = 2 mm
3 turns 0.5 mm copper wire; internal diameter = 2 mm
linear potentiometer
resistor
resistor
resistor
ferrite bead
BDT91 or equivalent
ATC 100A101kp
Tekelec 727-1
Erie, ref. 1250-003
100 pF
0.5 to 5.0 pF
1500 pF
10
μ
F, 50 V
4.7 k
100
, 0.25 W
10 k
, 0.25 W
50
, 0.25 W
Philips tube
3.7
×
1.2
×
3.5 mm (3B)
Fig.4 Class AB bias circuit.
MBD393
C5
C6
L2
DUT
L1
C8
R3
D1
D2
P1
F1
R2
R1
TR1
VCE
BIAS CIRCUIT
PREMATCHING TEST
CIRCUIT
C7
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