參數(shù)資料
型號: LF11201D
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 多路復用及模擬開關(guān)
英文描述: Quad SPST JFET Analog Switches
中文描述: QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, CDIP16
封裝: SIDE BRAZED, CERAMIC, DIP-16
文件頁數(shù): 2/18頁
文件大小: 416K
代理商: LF11201D
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 2)
Supply Voltage (V
CC
V
EE
)
Reference Voltage
Logic Input Voltage
Analog Voltage
36V
V
EE
V
R
V
CC
V
R
4.0V
V
IN
V
R
+6.0V
V
EE
V
A
V
CC
+6V;
V
A
V
EE
+36V
Analog Current
|I
A
|
<
20 mA
Power Dissipation (Note 3)
Molded DIP (N Suffix)
Cavity DIP (D Suffix)
Operating Temperature Range
LF11201, 2 and LF11331, 2, 3
LF13201, 2 and LF13331, 2, 3
Storage Temperature
Soldering Information
N and D Package (10 sec.)
SO Package:
Vapor Phase (60 sec.)
Infrared (15 sec.)
500 mW
900 mW
55C to +125C
0C to +70C
65C to +150C
300C
215C
220C
Electrical Characteristics
(Note 4)
LF11331/2/3
LF11201/2
Min
Typ
150
200
LF13331/2/3
LF13201/2
Min
Typ
150
200
10
±
10
±
11
0.3
3
0.4
3
0.1
3
2.0
Symbol
Parameter
Conditions
Units
Max
200
300
20
Max
250
350
50
R
ON
“ON” Resistance
V
A
=0, I
D
=1 mA
T
A
=25C
V
nA
nA
nA
nA
nA
nA
V
V
R
ON
Match
V
A
I
S(ON) +
I
D(ON)
I
S(OFF)
“ON” Resistance Matching
Analog Range
Leakage Current in “ON” Condition
T
A
=25C
5
±
10
±
11
0.3
3
0.4
3
0.1
3
Switch “ON,” V
S
=V
D
=
±
10V
T
A
=25C
5
10
30
10
30
10
30
100
5
100
5
100
Source Current in “OFF” Condition
Switch “OFF,” V
S
=+10V,
V
D
=10V
Switch “OFF,” V
S
=+10V,
V
D
=10V
T
A
=25C
I
D(OFF)
Drain Current in “OFF” Condition
T
A
=25C
V
INH
V
INL
I
INH
Logical “1” Input Voltage
Logical “0” Input Voltage
Logical “1” Input Current
2.0
0.8
10
25
0.1
1
0.8
40
100
0.1
1
V
IN
=5V
T
A
=25C
3.6
3.6
μA
I
INL
Logical “0” Input Current
V
IN
=0.8
T
A
=25C
μA
μA
ns
ns
ns
pF
pF
pF
t
ON
t
OFF
t
ON
t
OFF
C
S(OFF)
C
D(OFF)
C
S(ON) +
C
D(ON)
I
SO(OFF)
CT
SR
I
DIS
Delay Time “ON”
Delay Time “OFF”
Break-Before-Make
Source Capacitance
Drain Capacitance
Active Source and Drain Capacitance
V
S
=
±
10V, (Figure 3)
V
S
=
±
10V, (Figure 3)
V
S
=
±
10V, (Figure 3)
Switch “OFF,” V
S
=
±
10V
Switch “OFF,” V
D
=
±
10V
Switch “ON,” V
S
=V
D
=0V
T
A
=25C
T
A
=25C
T
A
=25C
T
A
=25C
T
A
=25C
T
A
=25C
500
90
80
4.0
3.0
5.0
500
90
80
4.0
3.0
5.0
“OFF” Isolation
Crosstalk
Analog Slew Rate
Disable Current
(Figure 4), (Note 5)
(Figure 4), (Note 5)
(Note 6)
(Figure 5), (Note 7)
T
A
=25C
T
A
=25C
T
A
=25C
T
A
=25C
50
65
50
0.4
0.6
3.0
4.2
2.0
2.8
4.5
6.3
50
65
50
0.6
0.9
4.3
6.0
2.7
3.8
7.0
9.8
dB
dB
V/μs
mA
mA
mA
mA
mA
mA
mA
mA
1.0
1.5
5.0
7.5
4.0
6.0
6.0
9.0
1.5
2.3
7.0
10.5
5.0
7.5
9.0
13.5
I
EE
Negative Supply Current
All Switches “OFF,” V
S
=
±
10V
T
A
=25C
I
R
Reference Supply Current
All Switches “OFF,” V
S
=
±
10V
T
A
=25C
I
CC
Positive Supply Current
All Switches “OFF,” V
S
=
±
10V
T
A
=25C
Note 1:
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2:
Refer to RETSF11201X, RETSF11331X, RETSF11332X and RETSF11333X for military specifications.
Note 3:
For operating at high temperature the molded DIP products must be derated based on a +100C maximum junction temperature and a thermal resistance
of +150C/W, devices in the cavity DIP are based on a +150C maximum junction temperature and are derated at
±
100C/W.
www.national.com
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