參數(shù)資料
型號(hào): LET9130
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS Ldmos Enhanced Technology
中文描述: RF功率晶體管LDMOS的增強(qiáng)技術(shù)
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 57K
代理商: LET9130
3/6
LET9130
Power Gain Vs Output Power
12
13
14
15
16
17
18
0
50
100
150
200
Pout (W)
G
Idq = 600 mA
Vdd = 28 V
f = 940 MHz
Idq = 800 mA
Idq = 1 A
TYPICAL PERFORMANCE
Efficiency Vs Output Power
0
10
20
30
40
50
60
0
50
100
150
200
Pout (W)
N
Vdd = 28 V
f = 940 MHz
Idq = 1 A
Input Return Loss Vs Output Power
-35
-30
-25
-20
-15
-10
0
50
100
150
200
Pout (W)
R
Vdd = 28 V
f = 940 MHz
Idq = 1 A
Power Gain Vs Output Power
12
13
14
15
16
17
18
0
50
100
150
200
Pout (W)
G
f = 940 MHz
Idq = 1 A
Vdd=28V
Tc = 50 °C
Tc = 85 °C
Tc = 25 °C
Power Gain Vs Output Power
12
13
14
15
16
17
18
0
50
100
150
200
Pout (W)
G
f = 940 MHz
Idq = 1 A
Vdd = 24 V
Vdd = 26 V
Vdd = 30 V
Vdd = 28 V
相關(guān)PDF資料
PDF描述
LF120 Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩(wěn)壓器)
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LF33 Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩(wěn)壓器)
LF35 Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩(wěn)壓器)
LF40 Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩(wěn)壓器)
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