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參數(shù)資料
| 型號(hào)： | LET9130 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| 中文描述： | RF功率晶體管LDMOS的增強(qiáng)技術(shù) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | LET9130 |
LET9130
2/6
ELECTRICAL SPECIFICATION
(T
CASE
= 25
°
C)
STATIC
(Per Section)
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
OSS
C
RSS
ESD PROTECTION CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0 V I
D
= 10
μ
A
V
GS
= 0 V
V
GS
= 0 V V
DS
= 65 V
V
GS
= 5 V V
DS
= 0 V
V
DS
= 26 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 0 V
65
V
V
DS
= 26 V
1
μ
A
μ
A
μ
A
10
1
I
D
= TBD
I
D
= 3 A
I
D
= 9 A
V
DD
= 28 V
V
DS
= 26 V
3
5
V
0.19
0.4
V
12
mho
f = 1 MHz
90
pF
f = 1 MHz
4.8
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC
(f = 920-960 MHz)
P
1dB
V
DD
= 28 V I
DQ
= 1 A
120
135
W
η
D
G
P
V
DD
= 28 V I
DQ
= 1 A P
OUT
= 130 W
48
51
%
V
DD
= 28 V I
DQ
= 1 A P
OUT
= 130 W
V
DD
= 28 V I
DQ
= 1 A P
OUT
= 130 W
ALL PHASE ANGLES
400 KHz < -60 dBc
600 KHz < -70 dBc
EVM < 3 %
400 KHz < -60 dBc
600 KHz < -70 dBc
EVM < 3 %
15
16
dB
Load
mismatch
10:1
VSWR
P
OUT(EDGE)
45
W
η
D(EDGE)
38
%
DYNAMIC
(f = 865-895 MHz)
P
1dB
V
DD
= 28 V I
DQ
= 1 A
120
135
W
η
D
V
DD
= 28 V I
DQ
= 1 A P
OUT
= 135 W
50
55
%
Load
mismatch
V
DD
= 28 V I
DQ
= 1 A P
OUT
= 135 W
ALL PHASE ANGLES
750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc
10:1
VSWR
P
OUT(CDMA)(1)
25
W
Gp
(CDMA)
V
DD
= 26 V I
DQ
= 800 mA P
OUT
= 25 W
16
17
dB
η
D(CDMA)(1)
750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc
29
%
Test Conditions
Class
2
M3
Human Body Model
Machine Model
(1) IS-95 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
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